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Prospect of Emerging Nonvolatile Memories

Published online by Cambridge University Press:  01 February 2011

Hongsik Jeong  and
Kinam Kim
Hongsik Jeong
Affiliation:
Advanced Technology Development, Memory Device Business, Samsung Electronics Co., San #24, Nongseo-Lee, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea
Kinam Kim
Affiliation:
Advanced Technology Development, Memory Device Business, Samsung Electronics Co., San #24, Nongseo-Lee, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea
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Abstract

Conventional nonvolatile memories such as Flash and EEPROM memory have successfully evolved toward high density and low cost. Especially, the market and density of flash memories has grown rapidly which leads semiconductor technology. However, there have been concerns about whether this successful progress can be maintained in the future nano era and can satisfy the requirement of diversified future IT market. Flash memories have the advantage of high density with small cell size and by contraries the disadvantage of slow writing speed and limited endurance. This slow writing speed and limited endurance is not aligned with the trend of high speed and reliability for future semiconductor memories.

The future for these conventional nonvolatile memories forces many research groups and companies to develop alternative memories with ideal memory characteristics such as non-volatility, high density, high speed, and low power, which none of the conventional memories can satisfy at the same time.

In this article, I will evaluate the characteristics of future nonvolatile memories such as ferroelectric random access memory (FRAM), magnetoresistive random access memory (MRAM) and phase change random access memory (PRAM). These memories have been recently evaluated because of the possibility that they can overcome the challenges that conventional memories are facing. Finally we will review critical technology barriers in developing future memory and predict the promising technology to overcome the barriers in conventional and emerging new memories, which will be technology guidelines for future memory development.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D7.6
Copyright
Copyright © Materials Research Society 2005

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References

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