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Properties of Ultra-Thin Thermal Silicon Nitride

Published online by Cambridge University Press:  01 February 2011

Katherine M. Buchheit ,
Hideki Takeuchi  and
Tsu-Jae King
Katherine M. Buchheit
Affiliation:
EECS Department, University of California, Berkeley CA 94720–1770
Hideki Takeuchi
Affiliation:
EECS Department, University of California, Berkeley CA 94720–1770
Tsu-Jae King
Affiliation:
EECS Department, University of California, Berkeley CA 94720–1770
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Abstract

Growth behavior and film properties of ultra-thin Si3N4 layers formed by RTN (rapid thermal nitridation) were characterized. The self-limiting growth characteristics of the RTN process are appealing for precise thickness control in the range of 0.5–2.5nm. From SCA (surface charge analysis), the existence of negative fixed charge and electron traps in nitrides was found, in contrast to positive fixed charge and hole traps in oxides, and improvements in interface properties were seen after high temperature annealing. From annealing ambient dependences, the physical origin of the electron traps is likely N-H bonds in the nitride films. AFM (atomic force microscopy) analysis revealed that an atomically flat nitride surface is obtained by post-nitridation spike annealing, but a longer anneal leads to a rougher surface. Effectiveness of ultra-thin nitride barriers against boron penetration from a p+ poly-Si gate was also confirmed by SRA (spreading resistance analysis).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E2.2
Copyright
Copyright © Materials Research Society 2004

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References

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