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Properties of Ultrathin Amorphous Silicon Nitride Films on III V Semiconductors

  • L.J. Huang (a1), R. W. M. Kwok (a1), W. M. Lau (a1), H. T. Tang (a2), W. N. Lennard (a2), I. V. Mitchell (a2), Peter J. Schultz (a2) and D. Landheer (a3)...

Abstract

Properties of ultrathin (— lOnm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation spectroscopy and x-ray photoelectron spectroscopy (XPS). The silicon nitride films were prepared by remote microwave plasma chemical vapour deposition (RPCVD). The results showed that oxidation of the film due to air exposure was restricted to the near surface with an oxygen penetration depth no greater than 2 nm. The residual stress in the as-grown films was substrate-dependent. For films on Si (100), the film induced residual stress was compressive with a value of 0.5GPa. Annealing at 500°C for 60 minutes resulted in a complete release of the residual stress. Vacuum annealing at a temperature below 500° C also led to changes of the electrical properties in the films but not the substrate.

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1. Robertson, J., Phil. Mag. B63, 47 (1991).
2. Kapoor, V.J., and Hankins, K.T. eds., Silicon nitride and silicon dioxide thin insulating films, (Electrochemical Society, Pennington, 1987).
3. Habraken, F.H.P.M. ed., Low pressure chemical vapor deposited silicon oxynitride films, material and application, (Springer, Heidelberg, 1991).
4. De Wolf, I., Vanhellemont, J., Rodriguez, A. R-, Horstrom, H., and Maes, H.E., J. Appl. Phys. 71, 898 (1992).
5. Hakvoort, R.A., Schut, H., Veen, A., Bik, W.M.A., and Habraken, F.H.P.M., Appl. Phys. Lett. 59, 1687 (1991).
6. Pearce, C.W., Fetcho, R.F., Gross, M.D., Koefer, R.F., and Pudliner, R.A., J. Appl. Phys. 71, 1838 (1992).
7. Okada, Y., Nakajima, S-I., Appl. Phys. Lett. 59, 1066 (1991).
8. Paloura, E.C., Logothetidis, S., Boultadakis, S., and Ves, S., Appl. Phys. Lett. 59, 280 (1991);
Paloura, E.C., Lagowski, J., and Gatos, H.C., J. Appl. Phys. 69, 3995 (1991).
9. Domansky, K., Petelenz, D., and Janata, J., Appl. Phys. Lett. 60, 2074 (1992).
11. Bhattacharya, R.S., and Holloway, P.H., Appl. Phys. Lett. 38, 545 (1981).
10. Landheer, D., Kwok, W., and Lau, W.M., (to be published).
12. Huang, L.J., and Lau, W.M., Appl. Phys. Lett. 60, 1108 (1992), and references therein.
13. Landheer, D., Skinner, N.G., Jackman, T.E., Thompson, D.A., Simmons, J.G., Stevanovic, D.V., and Khatamain, D., J. Vac. Sci. Technol. A9, 2594 (1991).
14. Vos, M. and Mitchell, I.V.; Phys. Rev. B46, XXX (1992); Nucl. Instrum. Method B, (1992). at press.
15. Schultz, P.J., Nucl. Instrum. Methods B30, 94 (1988).
16. Huang, L.J., Lau, W.M., Simpson, P.J., and Schultz, P.J., Phys. Rev. B46, 4086 (1992).
17. Sodhi, R.N.S., Lau, W.M., and Ingrey, S.I.J., J. Vac. Sci. Technol. A7, 663 (1989).
18. Chu, W.K., Mayer, J.W., and Nicolet, M-A., Backscattering spectrometry, (Academic Press, New York, 1978).
19. Huang, L.J., Kwok, R.W.M., Lau, W.M., Tang, H.T., Lennard, W.N., Mitchell, I.V., Schultz, P.J., Appl. Phys. Lett. 63 (2) (1993), at press.
20. Menendez, J. and Cardona, M., Phys. Rev. B29, 2051 (1984).
21. Bendow, B., Lipson, H.G., and Yukon, S.P., Phys. Rev. B16, 2684 (1977).
22. Mitra, S.S., and Massa, N.E., in Band theory and transport properties, ed. by Paul, W. (North-Holland, Amsterdam, 1982) p. 81.
23. Details of the measurement and interpretation of W parameters, which are related to the width of the annihilation gamma-ray lineshape, can be found in various other publications, including reference 9, 15 & 16 above.
24. Wei, L., Tabuki, Y., Konda, H., Tanigawa, S., J. Appl. Phys. 70, 7543 (1991).

Properties of Ultrathin Amorphous Silicon Nitride Films on III V Semiconductors

  • L.J. Huang (a1), R. W. M. Kwok (a1), W. M. Lau (a1), H. T. Tang (a2), W. N. Lennard (a2), I. V. Mitchell (a2), Peter J. Schultz (a2) and D. Landheer (a3)...

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