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Properties of SiGe Alloys Grown on Si Substrates by Liquid Phase Epitaxy

Published online by Cambridge University Press:  26 February 2011

M.I. Alonso ,
H.-P. Trah ,
E. Bauser ,
H. Cerva  and
H.P. Strunki
M.I. Alonso
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80
H.-P. Trah
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80
H. Cerva
Affiliation:
Siemens Research Laboratories, D-8000 München 83
H.P. Strunki
Affiliation:
Technical University, D-2100 Hamburg-Harburg Federal Republic of Germany
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Abstract

Si1−zGez single crystal layers were grown on Si(iii) by liquid phase epitaxy (LPE) over the entire composition range (0 ≤ x ( 1). Using Sn as solvent all compositions were produced; alloys with compositions 0 ≤ x ≤ 0.75 were obtained using In as solvent; the range 0.75 ≤ x ≤ 1 was covered with Bi solvent. The solvents used, the composition of the solution, the saturation temperature, and the cooling rate, were found to strongly influence the growth morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 419
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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