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Properties of PTO/YBCO Heterostructure on Bare SiC Substrates

Published online by Cambridge University Press:  10 February 2011

M. Duan ,
J. Linnros ,
C. S. Petersson  and
K. V. Rao
M. Duan
Affiliation:
Dept. of Electronics, Royal Institute of Technology, Electrum 229, S-164 40, Stockholm, SWEDEN
J. Linnros
Affiliation:
Dept. of Electronics, Royal Institute of Technology, Electrum 229, S-164 40, Stockholm, SWEDEN
C. S. Petersson
Affiliation:
Dept. of Electronics, Royal Institute of Technology, Electrum 229, S-164 40, Stockholm, SWEDEN
K. V. Rao
Affiliation:
Dept. of Condensed Matter Physics, Royal Institute of Technology, S-100 44, Stockholm, SWEDEN
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Abstract

The lead titanium oxide PbTiO3 (PTO) and High Tc Superconductor YBa2Cu3O7-x (YBCO) capacitor hetero structures have been fabricated by pulsed laser ablation directly on 3C-SiC substrates. X-ray diffraction analysis indicates that both PTO layer and YBCO layer are polycrystalline with a perovskite phase. The zero-field cooling (ZFC) curve of YBCO shows a transition temperature Tc around 60 K with a ΔTc ≈ 10 K in a dc SQUID measurement. The ferroelectric properties of the capacitors were characterized by a RT66A apparatus.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 499
Copyright
Copyright © Materials Research Society 1998

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References

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