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Properties of Metal Fluoride Films Deposited by Laser and E-Beam Evaporation

Published online by Cambridge University Press:  26 February 2011

Haluk Sankur ,
F. Woodberry ,
R. Hall  and
W. J. Gunning
Haluk Sankur
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
F. Woodberry
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
R. Hall
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
W. J. Gunning
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
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Abstract

The properties of metal fluoride films (MgF2 CeF3, LaF3 CaF2 and SrF2) deposited using cw laser and electron-beam evaporation were compared. The differences in film properties were subtle, but important. Films obtained by laser evaporation have lower losses in the UV (185–250 nm) and slightly better crystallinity than the films deposited by e-beam evaporation. Other optical and mechanical properties were independent of preparation method. Differences in the film properties were tentatively attributed to the higher proportion of dissociated species in the évaporant plume of the laser-evaporated materials.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 727
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Martin, P.J., J. Mat. Sci. 21, 1 (1983).Google Scholar
2. Takagi, T., Yamada, I., Matsubara, K. and Takaska, M., J. Crystal Growth 45, 318 (1978).Google Scholar
3. Sites, J.R., Gilstrap, P. and Rujkorakam, R., Opt. Eng. 22, 447 (1983).Google Scholar
4. Cheung, J.T., Mat. Res. Symp. Proc. 29, 301 (1984).CrossRefGoogle Scholar