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Properties of HgTe:ZnTe Strained Layer Superlattices Grown by MOVPE

  • J.T. Mullins (a1), P.A. Clifton (a1), P.D. Brown (a1), D.O. Hall (a1) and A.W. Brinkman (a1)...

Abstract

HgTe:ZnTe superlattices have been grown by thermal MOVPE at temperatures down to 325°C. At this temperature, interdiffusion is sufficiently low to make superlattice periods as low as 45A practicable. The results of theoretical calculations of the electronic structure of these materials are also reported. These show that the electronic structure may be significantly different to that found for the HgTe:CdTe system due to the large biaxial compression present in the HgTe well layers.

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Properties of HgTe:ZnTe Strained Layer Superlattices Grown by MOVPE

  • J.T. Mullins (a1), P.A. Clifton (a1), P.D. Brown (a1), D.O. Hall (a1) and A.W. Brinkman (a1)...

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