- Cited by 26
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Cited byCrossref Citations
This article has been cited by the following publications. This list is generated based on data provided by CrossRef.
Goldys, E. M. Paskova, T. Ivanov, I. G. Arnaudov, B. and Monemar, B. 1998. Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence. Applied Physics Letters, Vol. 73, Issue. 24, p. 3583.
Miskys, C. R. Kelly, M. K. Ambacher, O. and Stutzmann, M. 1999. MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates. physica status solidi (a), Vol. 176, Issue. 1, p. 443.
Kuznetsov, N. I. Nikolaev, A. E. Zubrilov, A. S. Melnik, Yu. V. and Dmitriev, V. A. 1999. Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates. Applied Physics Letters, Vol. 75, Issue. 20, p. 3138.
Paskova, T. Birch, J. Tungasmita, S. Beccard, R. Heuken, M. Svedberg, E. B. Runesson, P. Goldys, E. M. and Monemar, B. 1999. Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers. physica status solidi (a), Vol. 176, Issue. 1, p. 415.
Paskova, T. Goldys, E.M. and Monemar, B. 1999. Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films. Journal of Crystal Growth, Vol. 203, Issue. 1-2, p. 1.
Nikitina, I. Mosina, G. Melnik, Yu. Nikolaev, A. and Vassilevski, K. 1999. Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE. Materials Science and Engineering: B, Vol. 61-62, Issue. , p. 325.
Arnaudov, B. Paskova, T. Goldys, E. M. Yakimova, R. Evtimova, S. Ivanov, I. G. Henry, A. and Monemar, B. 1999. Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy. Journal of Applied Physics, Vol. 85, Issue. 11, p. 7888.
Paskova, T Goldys, E.M Yakimova, R Svedberg, E.B Henry, A and Monemar, B 2000. Influence of growth rate on the structure of thick GaN layers grown by HVPE. Journal of Crystal Growth, Vol. 208, Issue. 1-4, p. 18.
Nikolaev, V. I. Shpeizman, V. V. and Smirnov, B. I. 2000. Determination of elastic moduli of GaN epitaxial layers by microindentation technique. Physics of the Solid State, Vol. 42, Issue. 3, p. 437.
Yu, P. W. Park, C. S. and Kim, S. T. 2001. Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy. Journal of Applied Physics, Vol. 89, Issue. 3, p. 1692.
Paskova, T. Paskov, P.P. Darakchieva, V. Tungasmita, S. Birch, J. and Monemar, B. 2001. Defect Reduction in HVPE Growth of GaN and Related Optical Spectra. physica status solidi (a), Vol. 183, Issue. 1, p. 197.
Melnik, Yu. Tsvetkov, D. Pechnikov, A. Nikitina, I. Kuznetsov, N. and Dmitriev, V. 2001. Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy. physica status solidi (a), Vol. 188, Issue. 1, p. 463.
Kim, H.M. Oh, J.E. and Kang, T.W. 2001. Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method. Materials Letters, Vol. 47, Issue. 4-5, p. 276.
Liu, L. and Edgar, J.H. 2002. Substrates for gallium nitride epitaxy. Materials Science and Engineering: R: Reports, Vol. 37, Issue. 3, p. 61.
Vaudo, R.P. Xu, X. Loria, C. Salant, A.D. Flynn, J.S. and Brandes, G.R. 2002. GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality. physica status solidi (a), Vol. 194, Issue. 2, p. 494.
Smith, G. A. Dang, T. N. Nelson, T. R. Brown, J. L. Tsvetkov, D. Usikov, A. and Dmitriev, V. 2004. 341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes. Journal of Applied Physics, Vol. 95, Issue. 12, p. 8247.
Figge, S. Kruse, C. Paskova, T. and Hommel, D. 2004. Crystal Growth - From Fundamentals to Technology. p. 295.
Sands, T. D. Wong, W. S. and Cheung, N. W. 2004. Wafer Bonding. Vol. 75, Issue. , p. 377.
Kovalenkov, O. Soukhoveev, V. Ivantsov, V. Usikov, A. and Dmitriev, V. 2005. Thick AlN layers grown by HVPE. Journal of Crystal Growth, Vol. 281, Issue. 1, p. 87.
Fujito, Kenji Kubo, Shuichi and Fujimura, Isao 2009. Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE. MRS Bulletin, Vol. 34, Issue. 5, p. 313.
Properties of Free-Standing GaN Bulk Crystals Grown by HVPE
-
- DOI: https://doi.org/10.1557/PROC-482-269
- Published online by Cambridge University Press: 10 February 2011
Abstract
GaN wafers 200 μm thick and 30 mm diameter were fabricated. GaN was grown by hydride vapor phase epitaxy on SiC substrates and removed from the substrate by reactive ion etching. Lateral size of the GaN wafers was equal to the size of the initial SiC substrates. GaN wafers were cleaved in pieces and these pieces were characterised. It was found that after the fabrication, GaN crystals were slightly deformed and strained. An anneal at 830°C in nitrogen ambient eliminated the residual strains. The FWHM of ω-scan (0002) x-ray rocking curve for annealed crystals was less than 140 arcsec for both sides of the best GaN crystals. The lattice constants measured from both sides of the crystals were c =5.1853±0.0003 Å and a = 3.1889±0.0001 Å. The Nd – Na concentration determined by a mercury probe was about 2×1017cm−3 for as-grown GaN surface and about 2×1019cm−3 for former interface surface. Photoluminescence spectrum taken at 17 K revealed an edge peak at 3.472 eV with the FWHM value of 2.3 meV. A ratio of the edge peak intensity to the intensity of yellow band was higher than 1000. Initial TEM experiments were performed.
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COPYRIGHT: © Materials Research Society 1998
References
- Cited by 26
-
Cited byCrossref Citations
This article has been cited by the following publications. This list is generated based on data provided by CrossRef.
Goldys, E. M. Paskova, T. Ivanov, I. G. Arnaudov, B. and Monemar, B. 1998. Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence. Applied Physics Letters, Vol. 73, Issue. 24, p. 3583.
Miskys, C. R. Kelly, M. K. Ambacher, O. and Stutzmann, M. 1999. MOCVD-Epitaxy on Free-Standing HVPE-GaN Substrates. physica status solidi (a), Vol. 176, Issue. 1, p. 443.
Kuznetsov, N. I. Nikolaev, A. E. Zubrilov, A. S. Melnik, Yu. V. and Dmitriev, V. A. 1999. Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates. Applied Physics Letters, Vol. 75, Issue. 20, p. 3138.
Paskova, T. Birch, J. Tungasmita, S. Beccard, R. Heuken, M. Svedberg, E. B. Runesson, P. Goldys, E. M. and Monemar, B. 1999. Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers. physica status solidi (a), Vol. 176, Issue. 1, p. 415.
Paskova, T. Goldys, E.M. and Monemar, B. 1999. Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films. Journal of Crystal Growth, Vol. 203, Issue. 1-2, p. 1.
Nikitina, I. Mosina, G. Melnik, Yu. Nikolaev, A. and Vassilevski, K. 1999. Dislocation structure of GaN bulk crystals grown on SiC substrates by HVPE. Materials Science and Engineering: B, Vol. 61-62, Issue. , p. 325.
Arnaudov, B. Paskova, T. Goldys, E. M. Yakimova, R. Evtimova, S. Ivanov, I. G. Henry, A. and Monemar, B. 1999. Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy. Journal of Applied Physics, Vol. 85, Issue. 11, p. 7888.
Paskova, T Goldys, E.M Yakimova, R Svedberg, E.B Henry, A and Monemar, B 2000. Influence of growth rate on the structure of thick GaN layers grown by HVPE. Journal of Crystal Growth, Vol. 208, Issue. 1-4, p. 18.
Nikolaev, V. I. Shpeizman, V. V. and Smirnov, B. I. 2000. Determination of elastic moduli of GaN epitaxial layers by microindentation technique. Physics of the Solid State, Vol. 42, Issue. 3, p. 437.
Yu, P. W. Park, C. S. and Kim, S. T. 2001. Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy. Journal of Applied Physics, Vol. 89, Issue. 3, p. 1692.
Paskova, T. Paskov, P.P. Darakchieva, V. Tungasmita, S. Birch, J. and Monemar, B. 2001. Defect Reduction in HVPE Growth of GaN and Related Optical Spectra. physica status solidi (a), Vol. 183, Issue. 1, p. 197.
Melnik, Yu. Tsvetkov, D. Pechnikov, A. Nikitina, I. Kuznetsov, N. and Dmitriev, V. 2001. Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy. physica status solidi (a), Vol. 188, Issue. 1, p. 463.
Kim, H.M. Oh, J.E. and Kang, T.W. 2001. Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method. Materials Letters, Vol. 47, Issue. 4-5, p. 276.
Liu, L. and Edgar, J.H. 2002. Substrates for gallium nitride epitaxy. Materials Science and Engineering: R: Reports, Vol. 37, Issue. 3, p. 61.
Vaudo, R.P. Xu, X. Loria, C. Salant, A.D. Flynn, J.S. and Brandes, G.R. 2002. GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality. physica status solidi (a), Vol. 194, Issue. 2, p. 494.
Smith, G. A. Dang, T. N. Nelson, T. R. Brown, J. L. Tsvetkov, D. Usikov, A. and Dmitriev, V. 2004. 341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes. Journal of Applied Physics, Vol. 95, Issue. 12, p. 8247.
Figge, S. Kruse, C. Paskova, T. and Hommel, D. 2004. Crystal Growth - From Fundamentals to Technology. p. 295.
Sands, T. D. Wong, W. S. and Cheung, N. W. 2004. Wafer Bonding. Vol. 75, Issue. , p. 377.
Kovalenkov, O. Soukhoveev, V. Ivantsov, V. Usikov, A. and Dmitriev, V. 2005. Thick AlN layers grown by HVPE. Journal of Crystal Growth, Vol. 281, Issue. 1, p. 87.
Fujito, Kenji Kubo, Shuichi and Fujimura, Isao 2009. Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE. MRS Bulletin, Vol. 34, Issue. 5, p. 313.
Properties of Free-Standing GaN Bulk Crystals Grown by HVPE
-
- DOI: https://doi.org/10.1557/PROC-482-269
- Published online by Cambridge University Press: 10 February 2011
