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Properties of Cu in GaAs

Published online by Cambridge University Press:  26 February 2011

Rosa Leon ,
Maria Kaminska ,
Kin Man Yu  and
Eicke Weber
Rosa Leon
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720
Maria Kaminska
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720
Kin Man Yu
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720 Materials Science Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
Eicke Weber
Affiliation:
Department of Materials Science, University of California, Berkeley, CA 94720
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Abstract:

The electrical properties and preferred lattice sites of Cu in GaAs were studied combining electrical and optical measurements with Particle Induced X-ray Emission (PIXE) and Channeling. For electronic characterization, Deep Level Transient Spectroscopy (DLTS), Hall Effect measurements, and Photoluminescence (PL) were used. From this comprehensive study it was determined that Cu introduces two levels in the bandgap, that the concentration of electrically active copper is considerably smaller than the total copper concentration, and that most of the Cu in GaAs is not of purely substitutional character.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 379
Copyright
Copyright © Materials Research Society 1991

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References

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