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Properties of Au/Pb(Zr0.52Ti0.48)O3/ Bi4Ti3O12/p-Si Ferroelectric Memory Diodes

Published online by Cambridge University Press:  21 March 2011

Jun Yu ,
Hua Wang ,
Xiaomin Dong ,
Wenli Zhou ,
Yunbo Wang  and
Lili Zhu
Jun Yu
Affiliation:
Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China
Hua Wang
Affiliation:
Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China Department of Electron & Information, Guilin institute of Electronic Technology, Guilin, 541004, China
Xiaomin Dong
Affiliation:
Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China
Wenli Zhou
Affiliation:
Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China
Yunbo Wang
Affiliation:
Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China
Lili Zhu
Affiliation:
Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China
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Abstract

A ferroelectric memory diodes that consists of Au/Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the electrical characteristics of the ferroelectric film system were investigated. The polarization-voltage curve of Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12 thin films system had an asymmetry hysteresis loop with Pr=20μC/cm2 and Ec=48 kV/cm, and the decay in remnant polarization was only 10% after 109 switching cycles. The C-V curve and the I-V curve showed memory effects derived from the ferroelectric polarization of PZT/BIT films. The current density was 6.7×10−8A/cm2 at a voltage of +4V, and the conductivity behavior is discussed. The results suggested that the growth of the BIT ferroelectric layer is helpful to good ferroelectric properties, fatigue and capacitance retention characteristics.

Keywords

Ferroelctric diodesPb(Zr0.52Ti0.48)O3Bi4Ti3O12buffer layerpulsed laser deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC5.1.1
Copyright
Copyright © Materials Research Society 2001

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