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Properties and Strain Relaxation below Room Temperature of Epitaxial Pbse and Pb(Se,Te) on Fluoride-Covered Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

C. Maissen ,
H. Zogg ,
S. Blunier ,
A. Sultan ,
S. Teodoropol ,
T. Richmond ,
J.W. Tomm  and
G. Kostorz
C. Maissen
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
H. Zogg
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
S. Blunier
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
A. Sultan
Affiliation:
AFIF at Swiss Federal Institute of Technology, CH-8093 Zürich, Switzerland
S. Teodoropol
Affiliation:
Physics Institute, University of Zürich, CH-8001 Zürich, Switzerland
T. Richmond
Affiliation:
Physics Institute, University of Basel, CH-4056 Basel, Switzerland
J.W. Tomm
Affiliation:
Institut für Festkörperphysik, Humboldt Universität, DO-1040 Berlin, Germany
G. Kostorz
Affiliation:
Applied Physics, Swiss Federal Institute of Technology, CH-8093 Zürich., Switzerland
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Abstract

Narrow-gap PbSe and PbSe1−xTex films were grown by MBE on 3n-Si(111) wafers. The layers are used for IR-sensor array applications. Epitaxy was achieved by using an intermediate CaF2/BaF2 bilayer to overcome the large difference in lattice constants (14%) and thermal expansion coefficients (700%). While PbSe is rather soft, the hardness increases with x (x<0.5) in PbSe1−xTex. Thermal stresses are relieved by dislocation glide on (100)-planes, leading to slip lines on the surface. The surface morphology and step heights were studied with the scanning tunneling microscopy technique, and a model for the resulting (111)-surface structure is presented. The value of the remaining strain was determined with precision Rutherford backscattering spectrometry absolute angle measurements, X-ray diffraction and photoluminescence in the temperature range down to 10 K. It is found that no appreciable strain builds up even at cryogenic temperatures and after many temperature cycles. In contrast to PbSe, ternary PbSe1−xTex layers are strained elastically below room temperature owing to solid solution strengthening, and plastic deformation occurs only at higher temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 415
Copyright
Copyright © Materials Research Society 1992

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References

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