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Properties and Applications of Molecular Beam Epitaxial Silicides

Published online by Cambridge University Press:  25 February 2011

K. L. Wang  and
Y. C. Kao
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
Y. C. Kao
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
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Abstract

Transition metal silicides are now being used as essential and integral elements of microelectronics technology. Epitaxial growth and deposition provide additional flexibility for many device and circuit applications.

In this paper, various epitaxial growth techniques, namely solid phase epitaxy and molecular beam epitaxy are reviewed. The resulting morphology, crystallinity, and Schottky barrier heights as well as deep-level defects are contrasted. The parallel and perpendicular strains as a function of film thickness is reported.

Application of the epitaxial silicide in improving conventional integrated circuits as well as in fabricating new devices are discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 235
Copyright
Copyright © Materials Research Society 1986

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References

1. Muraka, S.P., Silicides for VLSI Applications, (Academic Press, 1983) p.2.Google Scholar
2. Nicolet, M-A. and Lau, S. S., Formation and Characterization of Transition-Metal Silicides, in VLSI Electronics; Microstructure Science, vol.6, ed. by Einspruch, , (Academic Press, 1983).Google Scholar
3. Ishiwara, H., Saitoh, S., and Hikosaka, K., Jap. J. Appl. Phys., 20, 843 (1981).CrossRefGoogle Scholar
4. Tung, R. T., Poate, J. M., Bean, J. C., Gibson, J. C. and Jacobson, D.C., Thin Solid Films, 93, 77 (1980).CrossRefGoogle Scholar
5. Kao, Y. C., Tejwani, M., Xie, Y. H., Lin, T. L., and Wang, K. L., J. Vac Sci. Technol. B3, 596 (1985).CrossRefGoogle Scholar
6. Saitoh, S., Ishiwara, H., Asano, T., and Furukawa, S., Jap. J. Appl. Phys. 20, 1649 (1981).CrossRefGoogle Scholar
7. Hunt, B. H., Lewis, N., Hall, E. L., Turner, L. G. and Schowalter, L. J., Okamoto, M., and Hashimoto, S., Proc. of Material Society Symposium Dec. 2–7, Layered Structures and Epitaxy (paper H.3.9) Boston, 1985 (unpublished).Google Scholar
8. Wang, K. L., Solid State Technology, 28(10), 137 (1985).Google Scholar
9. People, P., and Bean, J.C., Appl. Phys. Lett., 47, 322 (1985) and references therein.CrossRefGoogle Scholar
10. Tung, R. T., Gibson, J. M., and Poate, T. M., Appl. Phys. Lett. 42, 888 (1985).CrossRefGoogle Scholar
11. Tung, R. T., Gibson, J. M., and Poate, T. M., Phys. Rev. Lett. 50, 429 (1983).CrossRefGoogle Scholar
12. Speriosu, V. S., J. Appl. Phys. 52, 6094 (1981).CrossRefGoogle Scholar
13. Kao, Y. C., de Fresart, E., Wang, K.L., Hall, R., Bai, G., Jamieson, D. and Nicolet, M.A., Presented in electrochem. So. Mtg., Boston, Mass, May (1986).Google Scholar
14. Spicer, W. E. W. E., Chye, P. W., Skeath, P. R., Su, C. Y. and Lindau, I., J. Vac. Sci. Technol. 16, 1422 (1979).CrossRefGoogle Scholar
15. Brillson, L. J., J. Vac. Sci. Technol. 16, 1137 (1979).CrossRefGoogle Scholar
16. Freeouf, J. L., Jackson, J. N., Laux, S. E., and Woodall, J. M., J. Vac. Sci. Technol. 21, 570 (1982).CrossRefGoogle Scholar
17. Tung, R. T., Phys. Rev. Lett. 52, 461 (1984).CrossRefGoogle Scholar
18. Duke, C. B. and Mailhiot, C., Proc. of Material Research Society Symposium on Thin Films, paper 4.2, Boston, (1985); also private communication.Google Scholar
19. Harrison, T. R., Johnson, A. M., Tien, P. K., and Dayem, A. H., Appl. Phys. Lett. 41, 734(1982).CrossRefGoogle Scholar
20. Wang, K. L. and Li, G. P., IEEE Electronic Device Lett., 4, 444 (1983).CrossRefGoogle Scholar
21. Wang, K. L., Kao, Y. C., unplished work.Google Scholar
22. Rosencher, E., Delage, S., D'Avitaya, F. Arnaud, D'Anterroches, C., Belhaddad, K. and, Pfister, J. C., Physica 134B, 106(1985).Google Scholar
23. Hensel, J. C., Levi, A. F. J., Tung, R. T. and Gibson, J. M., Appl. Phys. Lett. 47, 151 (1985).CrossRefGoogle Scholar
24. Abadaash, R. and Wang, K. L. IEEE ED-31, 1701(1984) and SzeGoogle Scholar
25. Ishizaka, A. and Shiraki, Y., Jap. J. Appl. Phys. 23, 1 499 (1984).CrossRefGoogle Scholar