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Progress in Understanding the Optical Properties of EL2

Published online by Cambridge University Press:  25 February 2011

G. A. Baraff
G. A. Baraff*
Affiliation:
A.T.&T. Bell Laboratories, Murray Hill, N.J., 07974
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Abstract

The material covered in the talk given under this title has already been published [1] or has been accepted for publication [2]. For this reason, the material to be presented below will consist only of a summary with references.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 805
Copyright
Copyright © Materials Research Society 1990

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References

1 Baraff, G. A., Phys. Rev. B40, 1030, 1989 Google Scholar
2 Baraff, G. A., Phys. Rev. B41, 1990, (to be published)Google Scholar
3 a) Kaminska, M., Skowronski, W. and Kuszko, W., Phys Rev. Lett., 55 2204 (1985); b) M. Kaminska in Proc. 17th Int. Conf. on Phys. of Semiconductors, San Francisco (1984), Edited by D. J. Chadi and W. Harrison, Springer, New York, (1985) p.74l; c) J. Dabrowski and M. SchefΠer, Phys. Rev. Lett. 60, 2183, (1988); d) D.J. Chadi and K.J. Chang, Phys. Rev. Lett. 60, 2187, (1988); e) H.J. von Bardeleben, D. Stίevenard, D. Desresmes, A. Huber and J.C. Bourgoin, Phys. Rev. B34, 7192 (1986); f) B.K. Meyer, D.M. Hofmann, J.R. Niklas, and J.-M. Spaeth, Phys. Rev. B36, 1332 (1987); g) G.A. Baraff, Phys. Rev. Lett. 62, 2156, (1989)Google Scholar
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5 Baj, M. and Dreszer, P., in Proceedings of the 15th International Conference on Defects in Semiconductors. Edited by G. Ferenczi (Material Science Forum, Vol. 38-41, 1988, page 101. Trans Tech Publications, Switzerland)Google Scholar
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