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Progress in the Growth and Characterization of Ge Quantum Dots and Islands

Published online by Cambridge University Press:  01 February 2011

J.-M. Baribeau ,
N.L. Rowell  and
D.J. Lockwood
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, and National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
N.L. Rowell
Affiliation:
Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
D.J. Lockwood
Affiliation:
Institute for Microstructural Sciences, and National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
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Abstract

We review progress in the growth of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F5.1
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Eaglesham, D. J. and Cerullo, M., Phys. Rev. Lett. 64, 1943 (1990).Google Scholar
2. Mo, Y.-W., et al., Phys. Rev. Lett. 65, 1020 (1990).Google Scholar
3. Asaro, R. J. and Tiller, W. A., Metall. Trans. A 1789 (1972);Google Scholar
Grinfeld, M. A., Dokl. Akad. Nauk SSSR 290, 1358 (1986).Google Scholar
4. Teichert, B., Physics Reports 365, 335 (2002);Google Scholar
Zhang, Z. and Lagally, M. G., Morphological Organization in Epitaxial Growth and Removal, (World Scientific, 14, Singapore, 1998);Google Scholar
Brunner, K., Rep. Prog. Phys. 65, 27 (2002).Google Scholar
5. Baribeau, J.-M., Rowell, N. L. and Lockwood, D. J., in Self-Assembled Si1-xGex Dots and Islands, edited by Adachi, M. and Lockwood, D. J. (Kluwer/Plenum, New York, 2005).Google Scholar
6. Baribeau, J.-M., et al., J. Electrochem. Soc. 136, 1158 (1989).Google Scholar
7. Vailionis, A., et al., Phys. Rev. Lett. 85, 3672 (2000).Google Scholar
8. Liao, X. Z., et al., Phys. Rev. B 60, 15605 (1999).Google Scholar
9. Sonnet, P. and Kelires, P. C., Appl. Phys. Lett. 85, 203 (2004).Google Scholar
10. Medeiros-Ribeiro, G., et al., Science and Technology of Advanced Materials 279, 353 (1998).Google Scholar
11. Ross, F. M., Tromp, R. M. and Reuter, M. C., Science and Technology of Advanced Materials 286, 1931 (1999).Google Scholar
12. Shenoy, V. B. and Freund, L. B., J. Mech. Phys. Solids 50, 1817 (2002).Google Scholar
13. Berbezier, I., et al., Surf. Sci. 531, 231 (2003).Google Scholar
14. Chaparro, S. A., et al., J. Appl. Phys. 87, 245 (2000).Google Scholar
15. Drucker, J. and Chapparo, S., Appl. Phys. Lett. 71, 614 (1997).Google Scholar
16. Seta, M. D., et al., J. Appl. Phys. 92, 614 (2002);Google Scholar
Zhang, Y. and Drucker, J., J. Appl. Phys. 93, 9583 (2003).Google Scholar
17. Cho, B., et al., Phys. Rev. B 66, 195407 (2002).Google Scholar
18. Capellini, G., De Seta, M. and Evangelisti, F., Mat. Sci. Eng. B 89, 184 (2002).Google Scholar
19. Rastelli, A., Kummer, M. and Kanel, H. v., Phys. Rev. Lett. 87, 256101 (2001).Google Scholar
20. Rastelli, , Muller, E. and Kanel, H. v., Appl. Phys. Lett. 80, 1438 (2002).Google Scholar
21. Baribeau, J.-M., et al., in Advanced Luminescent Materials and Quantum Confinement, edited by Cahay, M., Bandyopadhyay, S., Lockwood, D. J., Leburton, J.P., Koshida, N., Meyyappan, M. and Sakamoto, T. (The Electrochemical Society, PV 99–22, Pennington, 1999) pp. 45–61.Google Scholar
22. Schmidt, O. G., et al., Appl. Phys. Lett. 77, 4139 (2000);Google Scholar
Stangl, J., et al., Appl. Phys. Lett. 77, 3953 (2000).Google Scholar
23. Le Thanh, V. and Yam, V., Appl. Surf. Sci. 212–213, 296 (2003).Google Scholar
24. Sutter, E., Sutter, P. and Vescan, L., Mat. Sci. Eng. B 89, 196 (2002).Google Scholar
25. Tersoff, J., Teichert, C. and Lagally, M. G., Phys. Rev. Lett. 76, 1675 (1996).Google Scholar
26. Stangl, J., et al., Appl. Phys. Lett. 79, 1474 (2001).Google Scholar
27. Hesse, A., et al., Phys. Rev. B 66, 085321 (2002).Google Scholar
28. Schülli, T. U., et al., Phys. Rev. Lett. 90, 066105 (2003).Google Scholar
29. Malachias, A., et al., Phys. Rev. Lett. 91, 176101 (2003).Google Scholar
30. Schmidt, O. G. and Eberl, K., Phys. Rev. B 61, 13721–13729 (2000);Google Scholar
Schmidt, O. G., et al., Appl. Phys. Lett. 81, 2614 (2002).Google Scholar
31. Liu, C. P., et al., Phys. Rev. Lett. 84, 1958 (2000).Google Scholar
32. Chen, Y. and Washburn, J., Phys. Rev. Lett. 77, 4046 (1996).Google Scholar
33. Ide, T., Sakai, A. and Shimizu, K., Thin Solid Films 357, 22 (1999).Google Scholar
34. Raiteri, P., et al., Appl. Phys. Lett. 80, 3736 (2002).Google Scholar
35. Huang, C. J., et al., Appl. Phys. Lett. 78, 3881 (2001).Google Scholar
36. Fuchs, H. D., et al., Phys. Rev. B 44, 13120 (1991).Google Scholar
37. Shin, H. K., Lockwood, D. J. and Baribeau, J.-M., Solid State Commun. 114, 505 (2000).Google Scholar
38. Sakamoto, K., et al., Thin Solid Films 321, 55 (1998).Google Scholar
39. Liu, F., Tersoff, J. and Lagally, M. G., Phys. Rev. Lett. 80, 1268 (1998).Google Scholar
40. Zhu, J.-H., Brunner, K. and Abstreiter, G., Appl. Phys. Lett. 73, 620 (1998).Google Scholar
41. Xie, Y. H., et al., Appl. Phys. Lett. 71, 3567 (1997);Google Scholar
Teichert, C., et al., Thin Solid Films 380, 25 (2000);Google Scholar
Leroy, F., et al., Appl. Phys. Lett. 80, 3078 (2002);Google Scholar
Shiryaev, S. Y., et al., Thin Solid Films 294, 311 (1997);Google Scholar
Voigtlander, B. and Theuerkauf, N., Surf. Sci. 461, L575 (2000).Google Scholar
42. Perovic, D. D., et al., Phys. Rev. B 43, 14257–14260 (1991);Google Scholar
Jackman, T. E., et al., in Proceedings of the 9th International Conference on Positron Annihilation, edited by Kajcsos, Z. and Szeles, C. (Trans. Tech. Publications, 105–110, Zurich, 1992) pp. 301–308;Google Scholar
Baribeau, J.-M., et al., J. Vac. Sci. Technol. B 22, 1479 (2004).Google Scholar
43. Kamins, T. I. and Williams, R. S., Appl. Phys. Lett. 71, 1201 (1997).Google Scholar
44. Jin, G., et al., Appl. Phys. Lett. 75, 2752 (1999).Google Scholar
45. Kamins, T. I., et al., Appl. Phys. Lett. 74, 1773 (1999).Google Scholar
46. Kitajima, T., Liu, B. and Leone, S. R., Appl. Phys. Lett. 80, 497 (2002);Google Scholar
Zhong, Z., et al., J. Appl. Phys. 93, 6258 (2003).Google Scholar
47. Zhong, Z., et al., Appl. Phys. Lett. 82, 445 (2003).Google Scholar
48. Zhong, Z., et al., Appl. Phys. Lett. 82, 4779 (2003);Google Scholar
Zhong, Z., et al., J. Appl. Phys. 93, 258 (2003);Google Scholar
Zhong, Z., et al., Physica E 23, 243 (2004).Google Scholar
49. Schmidt, O. G., et al., Appl. Phys. Lett. 71, 2340 (1997);Google Scholar
Schmidt, O. G., et al., Appl. Phys. Lett. 73, 59 (1998);Google Scholar
Schmidt, O. G., et al., Thin Solid Films 336, 248 (1998);Google Scholar
Shao, X., et al., J. Appl. Phys. 85, 578 (1999);Google Scholar
Dentel, D., et al., J. Appl. Phys. 93, 5069 (2003).Google Scholar
50. Dentel, D., et al., J. Appl. Phys. 88, 5113 (2000).Google Scholar
51. Wakayama, Y., et al., Appl. Surf. Sci. 216, 419 (2003).Google Scholar
52. Baribeau, J.-M., et al., Mat. Sci. Eng. B 89, 296 (2002);Google Scholar
Baribeau, J.-M., et al., Thin Solid Films 410, 61 (2002).Google Scholar
53. Leifeld, O., et al., Thin Solid Films 380, 176 (2000).Google Scholar
54. Sakai, A. and Tatsumi, T., Appl. Phys. Lett. 64, 52 (1994);Google Scholar
Baribeau, J.-M., et al., in Control of Semiconductor Surfaces and Interfaces, edited by Prokes, S. M., Glembocki, O. J., Brierley, S. K., Gibson, J. M. and Woodall, J. M. (Mat. Res. Soc. Proc., 448, Pittsburg, PA, 1997) pp. 113–118.Google Scholar
55. Portavoce, A., Ronda, A. and Berbezier, I., Mat. Sci. Eng. B 89, 205 (2002);Google Scholar
Portavoce, A., et al., Thin Solid Films 380, 164 (2000).Google Scholar
56. Eaglesham, D. J., Unterwald, F. C. and Jacobson, D. C., Phys. Rev. Lett. 70, 966 (1993).Google Scholar
57. Kamins, T. I., et al., J. Appl. Phys. 95, 1562 (2004).Google Scholar