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Progress in Epitaxial Oxides on Semiconductors

Published online by Cambridge University Press:  11 February 2011

Z. Yu
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
Y. Liang
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
H. Li
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Curless
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
C. Overgaard
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
R. Droopad
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
Y. Wei
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
X. Hu
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
B. Craigo
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Finder
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
K. Eisenbeiser
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
A. Talin
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
S. Smith
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
S. Voight
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Wang
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
D. Marshall
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
D. Jordan
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
J. Edwards Jr
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
K. Moore
Affiliation:
Physical Sciences Research Laboratories – Motorola Labs, 7700 S. River Parkway, MD, ML26, Tempe, AZ 85284, U.S.A.
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Abstract

In this paper, we review the recent progress in the area of epitaxial oxides on semiconductors at Motorola Labs. Critical issues such as surface preparation, initial nucleation and growth behaviors of SrTiO3 (STO) thin film epitaxy on Si(001) are addressed. Using a systematic approach, high-quality epitaxial STO films are successfully grown on semiconductor substrates such as Si, silicon-on-insulator (SOI) and Ge. Amorphous interfacial layer between the epitaxial STO and the semiconductor can be eliminated or tailored by controlling oxide growth process and parameters. STO-based metal-oxide-semiconductor (MOS) capacitors and transistors are fabricated and tested, in order to explore the potential of STO as high-k gate dielectrics for future generation CMOS transistor technology. In addition, high-quality STO epitaxial films are utilized as thin buffer layers for fabricating integrated oxide heterostructures on semiconductors. Various perovskite oxide films such as SrZrO3, LaAlO3 and Pb(Zr,Ti)O3 are deposited epitaxially on STO-buffered Si(001) for potential high-k gate dielectrics and surface-acoustic-wave (SAW) device applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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