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Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

Published online by Cambridge University Press:  01 February 2011

Sahar Sahhaf ,
Robin Degraeve ,
Mohammed Zahid  and
Guido Groeseneken
Sahar Sahhaf
Affiliation:
sahar.sahhaf@imec.be, Imec, Heverlee, Belgium
Robin Degraeve
Affiliation:
Robin.Degraeve@imec.be, Imec, Heverlee, Belgium
Mohammed Zahid
Affiliation:
Mohammed.Zahid@imec.be, Imec, Heverlee, Belgium
Guido Groeseneken
Affiliation:
Guido.Groeseneken@imec.be, Imec, Heverlee, Belgium
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Abstract

In this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

Keywords

thermal stressesdefectsdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I05-08
Copyright
Copyright © Materials Research Society 2010

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References

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