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Processing-Induced Stresses And Curvature In Patterned Lines On Silicon Wafers

Published online by Cambridge University Press:  15 February 2011

Y-L. Shen ,
S. Suresh  and
I. A. Blech
Y-L. Shen
Affiliation:
Department of Materials Science and Engineering
S. Suresh
Affiliation:
Department of Materials Science and Engineering
I. A. Blech
Affiliation:
Materials Processing Center, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

The evolution of stresses due to the patterning and thermal loading of thin lines on Si wafers, and the consequent changes in the overall curvature of the wafer are studied theoretically and experimentally. The analysis involves finite element simulations within the context of generalized plane strain models. The analysis is capable of predicting the wafer curvature in directions parallel and perpendicular to the lines. These predictions compare reasonably well with experimental measurements of curvature made on model systems. The thickness, width and spacing of the patterned lines have been varied systematically, and the associated changes in the evolution of stresses and curvature have been determined. The non-uniform stress field within the fine lines is also analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 505
Copyright
Copyright © Materials Research Society 1996

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