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Process Optimization for the Fabrication of the Thin PtSi Schottky Barrier Diode IRCCD
Published online by Cambridge University Press: 15 February 2011
Abstract
High quality abrupt junction PtSi thin film prepared by the MBE system with in situ precleaning and annealing was obtained. Wet etching and low energy hydrogen plasma excitation to generate H-terminated Si surface and low temperature thermal desorption were used to clean the substrate. IRCCD thus fabricated achieved the quantum efficiency 0.8%. TEM, STM/AFM, AES/ESCA, and RBS were used to monitor the fabrication processes.
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- Copyright © Materials Research Society 1994