Skip to main content Accessibility help
×
Home

Process Design for Non-Alloyed Contacts to InP-Based Laser Devices

  • A. Katz (a1), W. C. Dautremont-Smith (a1), S. N. G. Chu (a1), S. J. Pearton (a1), M. Geva (a1), B. E. Weir (a1), P. M. Thomas (a1) and L. C. Kimerling (a1)...

Abstract

Pl/Ti and W thin films on n- and p- type InP and related materials have been investigated for potential use as a refractory ohmic contacts for conventional, single-side coplanar contacted and self-aligned barrier hetcrostructurc laser devices. Pt and Ti films were deposited sequentially by electron gun evaporation, while the W layer was rf sputtered, both onto p+ -In0.53Ga0.47As (Zn doped 5×l018cm−3) and n- InP (S doped, 5×l018cm−3). The deposition parameters of the two metal systems were optimized to produce adherent films with the lowest possible induced stress. Almost all the studied systems performed as ohmic contacts already as-deposited and were heat treated by means of rapid thermal processing in the temperature range of 300–900°C. The final contact processing conditions were tuned to provide the lowest possible contact resistance values accompanied by low mechanical stress and stable microstructure.

Copyright

References

Hide All
[1] Katz, A., Weir, B. E., Chu, S. N. G., Thomas, P. M., Soler, M., Boone, T., Dautremont-Smith, W. C., J. Appl. Phys., To be published, Issue of April 1, (1990).
[2] Katz, A., Dautremont-Smith, W. C., Chu, S. N. G., Thomas, P. M., Loszi, L. A., Lee, J. W., Riggs, V. G., Brown, R. L., Napholtz, S. G. and Zilko, J. L., Appl. Phys. Lett. 54, 2306 (1989).
[3] Chu, S. N. G., Katz, A., Boone, T., Thomas, P. M., Riggs, V. G., Dautremont-Smith, W. C., and Johnston, W. D. Jr., J. Appl. Phys., To be published, issue of April 15, (1990).
[4] Katz, A., Thomas, P. M., Chu, S. N. G., Dautremont-Smith, W. C., Sobers, R. G. and Napholtz, S. G., J. Appl. Phys. 67. 884 (1990).
[5] Katz, A., Dautremont-Smith, W. C., Thomas, P. M., Koszi, L. A., Lee, J. W., Riggs, V. G., Brown, R. L., Zilko, J. L., and Lahav, A., J. Appl. Phys. 65, 4319 (1989).
[6] Katz, A., Weir, B. E., Maher, D. M., Thomas, P. M., Soler, M., Dautremont-Smith, W. C., Karlicek, R. F. Jr., Wynn, J. D. and Kimerling, L. C., Appl. Phys. Lett. 55, 2220 (1989).
[7] Katz, A., Pcarton, S. J. and Geva, M., Submitted to Appl. Phys. Lett..
[8] Ishii, K., Ohshima, T., Fulatsugi, T., Fujii, T., Yokoyama, N., and Shibatomi, A., IEDM 86 proceedings, 274 (1986).
[9] Lahav, A. G., Wu, C. S. and Baiocchi, F. A., J. Vac. Sci. Technol. B, 6, 1785 (1988).
[10] Yokoyama, N., Ohnishi, T., Onodera, H., Shinoki, T., Shibatomi, A., and Ishikawa, H., IEEE J. Solid-State Circuits 18, 520 (1983).
[11] Nakajima, K., in GalnAsP alloy semiconductors, edited by Pcarsall, T. P. (Wiley, New York, 1982), pp. 4360.
[12] Zilko, J. L., Flynn, E. J., Huo, D. C. T., Macrander, A. T. and Shen, T. M. (Private Communication).
[13] Long, J. A., Riggs, V. G. and Johnson, W. D. Jr., J. Cryst. Growth 69, 10 (1984).
[14] Reeves, G. K. and Harrison, H. B., IEEE Electron Device Lett. 5, 111 (1982).
[15] Katz, A., Chu, S. N. G., Dautremont-Smith, W. C., Soler, M., Weir, B. E. and Thomas, P. M., SPIE-89 Proceedings, To be published.
[16] Katz, A. and Dautremont-Smith, W. C., J. Appl. Phys., To be published, Issue of May 15, (1990).
[17] Cirillo, N. C. Jr., Chung, H. K., Void, P. J., Hibbs-Brenner, M. K. and Fraasch, A. M., J. Vac. Sci. Technol. B3, 1680 (1985).
[18] Ratajezyk, T. F. Jr. and Sinha, A. K., Thin Solid Films, 70, 241 (1980).
[19] Itoh, T., Ion Beam Assisted Film Growth, (Elsevier Science Publisher, New York, 1989) pp. 121123.
[20] Vossen, J. L. and Kern, W., Thin Film Processes, (Academic Press, New York, 1978), p.59.
[21] Levi, R. A. and Gallagher, P. K., J. Elcctrochem. Soc. 132, 1986 (1985).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed