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Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)

  • T. P. Schneider (a1), J. Cho (a1), J. Vander Weide (a1), S.E. Wells (a1), G. Lucovsky (a1), R.J. Nemanich (a1), M.J. Mantini (a2), R.A. Rudder (a1) and R.J. Markunas (a2)...

Abstract

This study details low pressure and low temperature cleaning of Si(100) surfaces. The properties of Si surfaces exposed to variations in plasma generated H are described. The diagnostic techniques used to study the processing conditions are residual gas analysis (RGA) and emission spectroscopy. The surface is characterized by low energy electron diffraction (LEED) and angle resolved uv-photoemission spectroscopy (ARUPS). During the cleaning, Si complexes are formed which indicates the removal of species from the Si(100) surface. Plasma cleaning at 300°C results in a Si(100) surface with 2×1 surface diffraction patterns as detected by LEED. Measurements by ARUPS with He I radiation show the absence of Si surface states on the Hpassivated surface. The ARUPS measurements also indicate that the H begins to desorb from the Si(100) H-passivated surface at ∼500°C.

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1. Hess, D.W., J. Vac. Sci. Technol. A8, 1677 (1990).
2. Anthony, B., Breaux, L., Hsu, T., Banerjee, S., and Tasch, A.. J. Vac. Sci. Technol. B 7(4), July/Aug 1989, pp. 621626.
3. Fenner, D.B.. Biegelsen, D.K., and Bringans, R.D.. J. Appl. Phys. 66 (1), 1 July 1989, pp. 419424.
4. Chapman, B.. Glow Discharge Processes, (John Wiley & Sons, New York, 1980), p. 16.
5. Rudder, R.A., Hattangady, S.V., Posthill, J.B., and Markunas, R.J., Mat. Res. Soc. Symp. Proc. Vol. 116, 529 (1988).
6. O'Hanlon, John F.. A Users Guide to Vacuum Technology, (John Wiley & Sons, New York, 1980), p.385.
7. Pearse, R.W.B., Gaydon, A.G.. The Identification of Molecular Spectra, 4th ed. (John Wiley & Sons, New York, 1968).
8. Harrison, G.V. and Uhrberg, R.I.G., Surf. Sci. Reports 9, 197 (1988).
9. Krogh, O., Wicker, T., and Chapman, B., J. Vac. Sci. Technol. B4, 1292 (1986).
10. Johansson, L.S.O., Uhrberg, R.I.G., and Harrison, G.V.. Surf. Sci. 189/190, 479 (1987).

Process and Surface Characterization of Hydrogen Plasma Cleaning of Si(100)

  • T. P. Schneider (a1), J. Cho (a1), J. Vander Weide (a1), S.E. Wells (a1), G. Lucovsky (a1), R.J. Nemanich (a1), M.J. Mantini (a2), R.A. Rudder (a1) and R.J. Markunas (a2)...

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