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Primary and Secondary Ion Deposition of Epitaxial Semiconductor Films From Laser-Induced Plasmas

Published online by Cambridge University Press:  21 February 2011

D. Lubben ,
S.A. Barneti ,
K. Suzuki  and
J.E. Greene
D. Lubben
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
S.A. Barneti
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
K. Suzuki
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
J.E. Greene
Affiliation:
Department of Metallurgy, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801
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Abstract

Primary and secondary ion deposition of epitaxial semiconductor films from laser-induced plasmas is reported Laser plasmas were generated by focusing 15 ns, 107 to 108 W/cm2 pulses of 5 eV photons from a KrF excimer laser onto Ge and Si wafer targets. Time-of-flight, current-voltage, and film thickness measurements at secondary (i.e., ion) targets indicated that the ions were emitted, with an average energy of ∼40 eV, in a distribution which was strongly peaked in the normal direction. Primary ion deposition was performed by placing substrates on an ion target/substrate heater biased to give additional ion acceleration as required. Secondary deposition was achieved by biasing the ion target, in this case a wafer of the same material as the laser target, sufficiently negative to sputter target material onto a third electrode. Epitaxial Si on (100) Si and Ge on (100) Si and (100) GaAs were obtained by both methods. Hall effect measurements on heteroepitaxial Ge grown at 1 μm/hr on GaAs substrates by primary deposition showed thatfthe films were p-type with hole concentrations of ∼1018 cm−3 and mobilities of ∼150 cm2/V-sec.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 359
Copyright
Copyright © Materials Research Society 1984

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References

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