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Pressure Dependence of Arsenic Diffusivity in Silicon

  • Eric Nygren (a1), Michael J. Aziz (a2), David Turnbull (a3), James F. Hays (a4), John M. Poate (a5), Dale C. Jacobson (a5) and Robert Hull (a5)...

Abstract

The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000°C under pressures up to 30 kilobars. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of ten. This diffusivity enhancement can be described by an average activation volume of -5.7±.8 cm3/mole. The activation enthalpy ranges from an ambient value of 4.5 eV to 3.6 eV at 30 kilobars

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COPYRIGHT: © Materials Research Society 1985

References

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[1] Hu, S. M., in Atomic Diffusion in Semiconductors, ed. Shaw, D. (Plenum, London, 1972)
[2] Boyd, F. R. and England, J. L., J. Geophys. Res. 65, 741 (1960)10.1029/JZ065i002p00741
[3] Aziz, M. J., Nygren, E., Hays, J. F., and Turnbull, D., to be published J. Appl. Phys. February 1985
[4] Watkins, G. D., in Lattice Defects in Semiconductors 1974, ed. Huntley, F. A., Institute of Physics Conference Series No. 23 (Institute of Physics, Bristol and London, 1975)
  • Cited by 3

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Pressure Dependence of Arsenic Diffusivity in Silicon

  • Eric Nygren (a1), Michael J. Aziz (a2), David Turnbull (a3), James F. Hays (a4), John M. Poate (a5), Dale C. Jacobson (a5) and Robert Hull (a5)...

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