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Preparation of Zinc Oxide Films by Low-Pressure Chemical Vapor Deposition Method

Published online by Cambridge University Press:  15 February 2011

Junichi Nishino ,
Shigeo Ohshio  and
Kiichiro Kamata
Junichi Nishino
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
Shigeo Ohshio
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
Kiichiro Kamata
Affiliation:
Department of Chemistry, Nagaoka University of Technology, Nagaoka, Niigata, 940–21, Japan
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Abstract

ZnO and Al-doped ZnO films prepared using a low-pressure chemical vapor deposition (LP-CVD) method were studied. The films were prepared on fused quartz substrates using bis(2,4-pentanedionato)zinc and tris(2,4-pentanedionato)aluminum which are inexpensive and stable source materials. The highly c-axis oriented ZnO films were grown on the substrates above 500°C. The minimum electrical resistivity of ρ=6.5×10−5Ωm was obtained for the ZnO film, and of ρ = 3.5×10−5Ωm was obtained for the ZnO:Al film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 219
Copyright
Copyright © Materials Research Society 1995

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References

1. Hammer, J. M., Channin, D. J., Duffy, M. T., and Wittke, J. P., Appl. Phys. Lett., 21 [8] 358–60(1972).Google Scholar
2. Vellekoop, M. J., Venema, A., Visser, C. C. G., and Sarro, P. M., Ceram. Bull., 69 [9] 1503–1505 (1990).Google Scholar
3. van de Pol, F. C. M., Ceram. Bull., 69 [12] 1959–65 (1990).Google Scholar
4. Aranovich, J., Ortiz, A., and Bube, R. H., J. Vac. Sci. Technol., 16 [4] 994–1003 (1979).Google Scholar
5. Wenas, W. W., Yamada, A., Konagai, M., and Takahashi, K., Jpn. J. Appl. Phys., 30 [3B] L441–43(1991).Google Scholar
6. Oktik, S., Prog. Crystal Growth and Charact., 17 [3], pp. 171–240 (1988).Google Scholar
7. Kamata, K., Nishino, J., Ohshio, S., and Kazunori, Maruyama and Ohtuki, M., J. Am. Ceram. Soc., 77 [2] 505–508(1994).Google Scholar
8. Nishino, J., Ohshio, S., and Kamata, K., J. Am. Ceram. Soc., 75 [12] 3469–72(1992).Google Scholar
9. Burstein, E., Phys. Rev., 93, 632–33(1954).Google Scholar
10. Moss, T. S., Proc. Phys. Soc. London, B67, 775–82(1954).Google Scholar
11. Hamberg, I., Granqvist, C. G., Berggren, K.-F., Sernelius, B. E., and Engström, L., Phys. Rev., B30, 3240-49(1984).Google Scholar
12. Sernelius, B. E., Phys. Rev., B36, 4878–87(1987).Google Scholar
13. Berggren, K.-F. and Sernelius, B. E., Phys. Rev., B24,1971–86(1981)Google Scholar
14. Sernelius, B. E., Berggren, K. -F., Jin, Z.-C., Hamberg, I., and Granqvist, C. G., Phys. Rev., B37,10244–48(1988).Google Scholar