Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-18T23:19:29.285Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation of sub-100nm Thickness PZT thin Films with Chemical Solution Deposition Method for low Voltage Operation

Published online by Cambridge University Press:  21 March 2011

Yong Kyun Lee ,
June Key Lee ,
Chang Jung Kim ,
Insook Yi  and
Ilsub Chung
Yong Kyun Lee
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
June Key Lee
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
Chang Jung Kim
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
Insook Yi
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349, Email: yklee@sait.samsung.co.kr
Ilsub Chung
Affiliation:
Microelectronics Lab, Material and Device Sector, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Korea 440-600 Phone:82-31-280-9336, fax:82-31-280-9349
Get access

Abstract

PZT thin films with a thickness of 70 nm were successfully fabricated using a modified solution combined with PbTiO3 seed layer. Throughout various approaches, we found that the microstructure of PZT thin film plays an important role in determining the electrical properties such as hysteretic properties and leakage currents, particularly when the thickness is below 100 nm. We modified the precursor system to improve the microstructure in PZT thin film. In addition, we also adopted a thin PbTiO3 seed layer to enhance the initial nucleation density. Finally, we could obtain good electric properties similar to those obtained from 240 nm thick PZT film. The hysteretic properties is excellent enough to operate at a low voltage (2V) for a high density FRAM application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC1.7.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

(1) Swartz, S.L., IEEE Trans. Electron. Insul. 25 (1990) 935.10.1109/14.59868Google Scholar
(2) Parker, I.H., Tasch, A.F., Circuits Devices Mag. 6 (1990) 17.10.1109/101.47582Google Scholar
(3) Burill, L.A., Brooks, K.G., J. Appl. Phys. 75 (1994) 4501.10.1063/1.355941Google Scholar
(4) Jung, D.J.et.al., IEDM Technical Digest, pp. 279–282. 1999 Google Scholar
(5) Meng, X.J.et.al., “Dependence of texture development on thickness of single-annealed-layer in sol-gel derived PZT thin films”, Thin solid Films, 368, 22–25, 2000 10.1016/S0040-6090(00)00714-8Google Scholar
(6) Soyama, N.et. al., “Preparation of PZT Thin Films for Low Voltage Application by Sol-Gel Method”, to be publishedGoogle Scholar
(7) Lee, Wanin and Lee, June Key, Materials Research Bulletin, Vol.30, No.10, 1185 (1995)10.1016/0025-5408(95)00137-9Google Scholar
(8) Lee, J.K.et. al., “A Novel Cleaning Method of Dry Etch Damaged Layer in PZT Thin Film Capacitor”, J. Appl. Phys., 86, p63–76, 1999 Google Scholar
(9) Chung, Chee Won, Lee, Wanin, and Lee, June Key, Integrated Ferroelectrics, Vol.11, 259 (1995)10.1080/10584589508013597Google Scholar
(10) Ishikawa, Kenji. et. al., “Effect of PbTiO3 Seeding Layer on the Growth of sol-gel derived Pb(Zr0.53Ti0.47)O3 Thin Film”. Jpn. J. Appl. Phys. Vol. 37. Pp. 5128–5131, 1998 10.1143/JJAP.37.5128Google Scholar
(11) Cattan, E.. et al., “Structure control of Pb(Zr,Ti)O3 films using PbTiO3 buffer layers produced by magnetron sputtering” Appl. Phys. Lett. 70(13) march. 1997 10.1063/1.118679Google Scholar