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Preparation of PZT Thin Films by ECR PECVD

Published online by Cambridge University Press:  15 February 2011

J. W. Kim ,
S. T. Kim ,
S. W. Chung ,
J. S. Shin ,
K. S. No ,
D. M. Wee  and
W. J. Lee
J. W. Kim
Affiliation:
Department of Electronic Materials Engineering
S. T. Kim
Affiliation:
Department of Electronic Materials Engineering
S. W. Chung
Affiliation:
Department of Electronic Materials Engineering
J. S. Shin
Affiliation:
Department of Electronic Materials Engineering
K. S. No
Affiliation:
Department of Ceramic Science and EngineeringKorea Advanced Institute of Science and Technology, Taejon, 305–701South Korea.
D. M. Wee
Affiliation:
Department of Electronic Materials Engineering
W. J. Lee
Affiliation:
Department of Electronic Materials Engineering
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Abstract

Lead zirconate titanite (PZT) thin films have been prepared on Pt/Ti/SiO2/Si and Pt/Ta/Si2/Si substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) at low temperatures using metal-organic (MO) sources. One of the advantages of this method is the easy control of the cation concentrations in the PZT films through the adjustment of the flow rates of each MO sources. The film compositional ratio Ti/Zr was found to be linearly proportional to the flow rate ratio of the input Ti and Zr MO sources. The Pb/(Zr+Ti) ratio was not so much affected by the Ti source flow rate but was inversely proportional to the Zr source flow rate. Pb concentration in the deposited PZT films increased with increasing Ti source flow rate and with decreasing substrate temperature. Perovskite single phase PZT films were successfully fabricated at low temperatures below 500 °C. The perovskite structure was obtained when the Pb/(Zr+Ti) ratio in the deposited film was close to 1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 343: Symposium H – Polycrystalline Thin Films - Structure, Texture, Properties and Applications , 1994 , 493
Copyright
Copyright © Materials Research Society 1994

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References

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