Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-30T08:16:38.473Z Has data issue: false hasContentIssue false
  • English
  • Français

Preparation and Physical Properties of BI2TI2O7 Single Crystal Thin Film on SI (100) Substrate by Mocvd

Published online by Cambridge University Press:  10 February 2011

Hong Wang ,
S. X. Shang ,
X. J. Su ,
Z. Wang  and
M. Wang
Hong Wang
Affiliation:
Institute of Crystal Materials Shandong University, Jinan 250100, P.R.China
S. X. Shang
Affiliation:
Institute of Crystal Materials Shandong University, Jinan 250100, P.R.China Dept. of environment engineering, Shandong University, Jinan 250100, P.R.China
X. J. Su
Affiliation:
Institute of Crystal Materials Shandong University, Jinan 250100, P.R.China
Z. Wang
Affiliation:
Institute of Crystal Materials Shandong University, Jinan 250100, P.R.China
M. Wang
Affiliation:
Institute of Crystal Materials Shandong University, Jinan 250100, P.R.China
Get access

Abstract

Insulating thin films of Bi2Ti2O7 with (111) orientation have been prepared on silicon (100)–substrates at a temperature range of 480–550 °C by a MOCVD technique. The dielectric and C‐V properties were studied. The dielectric constant (ɛ) and loss tangent (tanδ) were found to be 180 and 0.01, respectively. The temperature and frequency dependence of dielectric constant were also measured. The Bi2Ti2O7 films are suitable to be used as a novel buffer layer and new insulating gate material in FET devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 333
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Swartz, S. L. and Wood, V. E., Condensed Matter News 1, p. 4, (1992)Google Scholar
2 Nakamura, T., Muhammet, R., Shimizu, M. and Shiosaki, T., Jpn. J. Appl. Phys. 32, p.4086 (1993)Google Scholar
3 Yao, Z. Q. and Dimitruev, S., Integrated Ferroelectrics 9, p. 105, (1995)Google Scholar
4 Wang, H., Fu, L. W. and Shang, S. X., J. Appl. Phys. 73, p.7963 (1993).Google Scholar
5 Wang, H., Shang, S. X., Wang, Z. and Wang, M., J. SPIE 2897 p.339 (1996)Google Scholar
6 Sayer, M., Mansingh, A., Arora, A. K. and Lo, A., Integrated Ferroelectrics 1, p. 129 (1992).Google Scholar