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Preparation and Microstructural Characterization of Ferroelectric Thin Film PbTiO3 on Si, MgO, and Sapphire Deposited by DC Reactive Multitarget Co-Sputtering.

Published online by Cambridge University Press:  25 February 2011

K.Y. Kim ,
H.I. Hwang ,
J.Y. Lee  and
W.K. Choo
K.Y. Kim
Affiliation:
Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, Seoul, Korea
H.I. Hwang
Affiliation:
Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, Seoul, Korea
J.Y. Lee
Affiliation:
Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, Seoul, Korea
W.K. Choo
Affiliation:
Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, Seoul, Korea
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Abstract

PbTiO3 thin films on Si (100) plane were prepared by the DC reactive multitarget cosputtering technique. The film composition and structure were examined as a function of deposition parameters. The crystal structure and microstructure of PbTiO3 thin film deposited on Si at low substrate temperature of 200°C were examined as a fuction of post-annealing temperature by X-ray diffraction and transmission electron microscopy.The ferroelectric domain configurations were analyzed by plane-view TEM. The preferred orientation of PbTiO3 thin films deposited on MgO (100) and sapphire (1102) at high substrate temperature of 520°C were also examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 197
Copyright
Copyright © Materials Research Society 1992

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