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Preparation and Evaluation of p-Type Materials for a-Si Solar Cells Using DC Plasma Discharge Deposition of Trimethylboron (B(CH3)3)

Published online by Cambridge University Press:  25 February 2011

Benjamin F. Fieselmann  and
B. Goldstein
Benjamin F. Fieselmann
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Rd., Newtown, PA 18940 USA
B. Goldstein
Affiliation:
Solarex Corporation, 826 Newtown-Yardley Rd., Newtown, PA 18940 USA
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Abstract

Amorphous SiC p-layers doped with trimethylboron (B(CH3) 3) were prepared with optical and electrical properties superior to those prepared with B2H6. Devices were prepared with efficiencies as high as 11.4% using trimethyl boron. The improved properties of B(CH3)3-doped a-SiC result from the fact that trimethylboron is a more effective doping agent than B2H6 and produces p-layers with a higher bandgap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 441
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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