Skip to main content Accessibility help
×
Home

Preparation and Characterization of Microcrystalline and Epitactially Grown Emitter Layers for Silicon Solar Cells

  • K. Lips (a1), J. Platen (a1), S. Brehme (a1), S. Gall (a1), I. Sieber (a1), L. Elstner (a1) and W. Fuhs (a1)...

Abstract

We have deposited thin B- and P-doped Si layers by electron cyclotron resonance CVD on c- Si (4 Ωcm, CZ) and on quartz glass substrates at T=325°C. Films grown on quartz glass are of microcrystalline nature with crystalline volume fractions of about 70 % and a resistivity ranging from 0.01 - 10 (Ωcm)−1 depending on doping concentration. The doping efficiency is close to unity with the carrier mobility being independent of doping concentration for both B- and Pdoping. Films grown on c-Si, on the other hand, exhibit perfect homoepitaxial morphology when the gas phase doping concentration exceeds 1000 ppm and 5000 ppm for P- and B-doping, respectively. The quality of the films is tested by preparing thin film emitter solar cells. We find efficiencies above 11 % for cells without ARC. The result are compared to cells with diffused emitters, otherwise prepared with the same technological steps.

Copyright

References

Hide All
1 Keppner, H., Kroll, U., Torres, P., Meier, J., Fischer, D., Goetz, M., Tscharner, R. and Shah, A., in 25th IEEE PVSC, Washington D.C., 1996, p. 669.
2 Yamamoto, K., Yoshimi, M., Suzuki, T., Tawada, Y., Okamoto, T. and Nakajima, A., in 2nd World Conf. on PVSEC, Vienna, Austria, 1998, to be publ.
3 MOller, P., Beckers, I., Conrad, E., Elstner, L. and Fuhs, W., in 25th IEEE PVSC, Washington D.C., 1996, p. 673.
4 Conrad, E., Elstner, L., Fuhs, W., Henrion, W., Muller, P., Selle, B. and Zeimer, U., in 26th PVSC, Anaheim, Ca, 1997, p. 755.
5 Carius, R., Finger, F., Backhausen, U., Luysberg, M., Hapke, P., Houben, L., Otte, M. and Overhof, H., in Mat. Res. Soc. Symp., edited by Wagner, S., Hack, M., Schiff, E. A., Schropp, R. and Shimizu, I. (MRS, San Francisco, 1997), Vol.467, p. 283.
6 Middya, A. R., Guillet, J., Brenot, R., Perrin, J., Bouree, J. E., Longeaud, C. and Kleider, J. P., in Mat. Res. Soc. Symp. (MRS, San Francisco, 1997), Vol.467, p. 271.
7 Rogers, J. L., Andry, P. S., Varhue, W. J., McGaughnea, P., Adams, E. and Kontra, R., Appl. Phys. Lett. 67, 971 (1995).
8 Mui, D. S. L., Fang, S. F. and Morkog, H., Appl. Phys. Lett. 59, 1887 (1991).
9 Varhue, W. J., Rogers, J. L., Andry, P. S. and Adams, E., Appl. Phys. Lett. 68, 349 (1996).
10 Yamada, H. and Torni, Y., Appl. Phys. Lett. 50, 386 (1987).
11 Tae, H.-S., Hwang, S.-H., Park, S.-J., Yoon, E. and Whang, K.-W., J. Appl. Phys. 78, 4112 (1995).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed