The use of pyroelectric thin films in uncooled IR detectors has many advantages over the present IR detector technology, which requires extensive cooling for operation. These advantages include reduced weight, reduced footprint, reduced complexity, increased reliability, and decreased maintenance. Ba1-xSrxTiO3 (BST), based thin films are ideal candidates for use in these devices due to their tailorable materials properties. These properties include a high dielectric constant, low dielectric loss, high electrical resistivity, as well as a high pyroelectric constant. BST thin films were doped with Mg in varying amounts, from 0 to 20mol%. The thin films were deposited via metalorganic solution deposition (MOSD) on Pt/Ti/SiO2/Si substrates. Annealing temperatures ranged from 500 to 750 °C. The films were characterized for structural, microstructural, compositional, surface morphological, dielectric and insulating properties. Glancing angle x-ray diffraction (GAXRD) was used to determine crystallinity, phase formation and film orientation. Field emission scanning electron microscopy (FESEM) and cross sectional transmission electron microscopy (TEM) were employed to access surface morphology and microstructure. The Materials Detectivity Figure of Merit (FOM), D*, [D*= pi /(C V (ε0ε r tanδ)1/2] was used to evaluate the film's detectivity response. Our results show that undoped Ba60Sr40TiO3, with a value D*= 0.08 (cm3/J)1/2, appears to out perform Pb based pyroelectric thin films, thus making it a viable candidate for IR pyroelectric detector applications.