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Preferentially Oriented Cubic Boron Nitride Films Grown on Si (001) Substrates by Ion Assisted Pulsed Laser Deposition

Published online by Cambridge University Press:  01 January 1992

A. K. Ballal
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115
L. Salamanca-riba
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115
G. L. Doll
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115 Physics Department, General Motors Research Laboratories, Warren, MI 48090–9055
C. A. Taylor II
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115 Physics Department, University of Michigan, Ann Arbor, MI 48109–1120
R. Clarke
Affiliation:
Materials and Nuclear Engineering Department, University of Maryland, College Park, MD 20742–2115 Physics Department, University of Michigan, Ann Arbor, MI 48109–1120
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Abstract

Preferentially oriented and extremely adherent cubic boron nitride films have been obtained using ion-assisted pulsed laser deposition on (001) Si substrates. The films were ∼ 1800 Å thick, optically transparent and formed an antireflective coating on the Si substrate. Infrared transmittance spectra showed a strong absorption peak at 1080 cm−1, indicating sp3 bonded film. Cross-sectional and plan-view transmission electron microscopy indicate that the cubic boron nitride films are polycrystalline having cubic zinc-blende crystal structure and a lattice constant of 3.62 Å. A preferred texture is observed with the [110] axis of cubic boron nitride parallel to [001] axis of silicon.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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