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Preferential Growth of CoSi2 in Co/Si Solid State Interaction by Rapid Thermal Annealing

  • Ping Liu (a1), Feng Hong (a1), Bing-Zong Li (a1) and Xiao-Liang Sheng (a2)

Abstract

The CoSi2 thin film growth by Co/Si solid state interaction was investigated. The electrical and crystal properties of the films formed on (111) and (100) Si substrates were characterized after a rapid thermal annealing. A strong preferential CoSi2 (111) orientation grain growth was observed on (111)Si substrate. The formed CoSi2 film was highly conductive with a resistivity of 15.5 µΩ · cm.

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