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Precursors for the Chemical Vator Deposition of Titanium Nitride and Titanium Aluminum Nitride Films

Published online by Cambridge University Press:  10 February 2011

Charles H. Winter ,
Peggy J. McKarns  and
Joseph T. Scheper
Charles H. Winter
Affiliation:
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, cwinter@sun.science.wayne.edu
Peggy J. McKarns
Affiliation:
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, cwinter@sun.science.wayne.edu
Joseph T. Scheper
Affiliation:
Department of Chemistry, Wayne State University, Detroit, Michigan 48202, cwinter@sun.science.wayne.edu
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Abstract

Titanium nitride and ternary alloys thereof are of significant interest due to their hardness, chemical resistance, and good electrical conductivity. We report the synthesis, structure, and properties of several new precursors to titanium nitride that are based upon hydrazine-derived ligands. Application of these complexes in titanium nitride film depositions is overviewed. Film properties and characterization are presented. We also describe a new process for the preparation of titanium aluminum nitride films, and focus on how the presence of small amounts of aluminum change the properties of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 95
Copyright
Copyright © Materials Research Society 1998

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