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Precision of Non-invasive Temperature Measurement by Diffuse Reflectance Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Zhongze Wang ,
Siu L. Kwan ,
T. P. Pearsall ,
James Booth ,
Barrett T. Beard Jr.  and
Shane R. Johnson
Zhongze Wang
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, Washington, 98195, zzw@u.washington.edu
Siu L. Kwan
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, Washington, 98195, zzw@u.washington.edu
T. P. Pearsall
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, Washington, 98195, zzw@u.washington.edu
James Booth
Affiliation:
Thermionics, NW, Port Townsend, Washington, 98368
Barrett T. Beard Jr.
Affiliation:
Thermionics, NW, Port Townsend, Washington, 98368
Shane R. Johnson
Affiliation:
Deaprtment of Physics, University of British Columbia, Vancouver B.C. V6T IZ 1, Canada
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Abstract

We demonstrate the use of diffuse reflectance spectroscopy as a non-invasive probe for measurement of temperature in real time on Si and GaAs substrates during semiconductor processing. Our results show that the standard deviation of the non-invasive optical technique is less than 0.7 °C for GaAs over the temperature range 50 °C < T< 600 °C with 5-second updates. These results support the notion that non-invasive optical temperature measurement can be used in semiconductor processing with a precision exceeding that of a thermocouple.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 69
Copyright
Copyright © Materials Research Society 1996

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References

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