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Precise Control of Nucleation and Growth in Lead Zirconate Titanate Thin Films by Scanning Rapid Thermal Annealing

Published online by Cambridge University Press:  17 March 2011

Jang-Sik Lee  and
Seung-Ki Joo
Jang-Sik Lee
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Korea, cleancut@plaza1.snu.ac.kr
Seung-Ki Joo
Affiliation:
School of Materials Science and Engineering, College of Engineering, Seoul National University, Seoul 151-742, Korea, cleancut@plaza1.snu.ac.kr
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Abstract

In this paper, a novel annealing method, scanning-rapid thermal annealing (RTA), for the selectively nucleated lateral crystallization (SNLC) of Pb(Zr,Ti)O3 (PZT) thin films is discussed. The effects of lamp power and scan speed on the SNLC were investigated. It was found that scanning-RTA was very effective method for SNLC in reducing the process time and preventing undesirable nucleation at other than pre-determined positions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C1.3.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Lee, J.-S. and Joo, S.-K., Jpn. J. Appl. Phys., 39, 6343 (2000).Google Scholar
2. Lee, J.-S. and Joo, S.-K., Jpn. J. Appl. Phys., 40, 229 (2001).Google Scholar
3. Lee, J.-S. and Joo, S.-K., Appl. Phys. Lett., to be published.Google Scholar
4. Kim, T.-K., Kim, G.-B., Yoon, Y.-G., Kim, C.-H., Lee, B.-I. and Joo, S.-K., Jpn. J. Appl. Phys., 39, 5773 (2000).Google Scholar