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Precipitation of Copper in Transmutation Doped Silicon

Published online by Cambridge University Press:  22 February 2011

R. Gleichmann
R. Gleichmann*
Affiliation:
Adw der Ddr, Institut f. Festkoerperphysik und Elektronenmikroskopie, Weinberg 2, 4020 Halle/S., German Democratic Republic
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Abstract

During the long-time diffusion of transmutation doped silicon a variety of large CuSi precipitates is introduced into the material. The precipitates have been found to be metastable and transform during subsequent heat treatments. One of the most surprising results of such a transformation is the generation of large, extended monolayer precipitates, which are shown to represent the stable configuration of the precipitate system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 287
Copyright
Copyright © Materials Research Society 1984

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References

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