Hostname: page-component-5c6d5d7d68-lvtdw Total loading time: 0 Render date: 2024-08-28T23:33:39.567Z Has data issue: false hasContentIssue false
  • English
  • Français

Precipitation of Copper and Palladium at the SiO2/Silicon Interface

Published online by Cambridge University Press:  28 February 2011

H. Cerva  and
H. Wendt
H. Cerva
Affiliation:
Siemens AG, Research Laboratories, Otto Hahn Ring 6, D-8000 München 83, Federal Republic of Germany
H. Wendt
Affiliation:
Siemens AG, Research Laboratories, Otto Hahn Ring 6, D-8000 München 83, Federal Republic of Germany
Get access

Abstract

The influence of Cu or Pd contamination on the integrity of thin SiO2 layers was studied on (100) and (111) Si substrates. Wafers were contaminated intentionally on their backsides and indiffusion of the impurities was carried out at 1200° C or 900°C by rapid thermal annealing. Both, electrical tests and cross-sectional transmission electron microscopy were applied to investigate the failure mechanisms of the oxide. Curich silicide particles as well as Pd-Si precipitates were observed at the SiO2 interface. They result in cracking and bending of the oxide film or reducing the oxide thickness. These oxide failures could be explained by a precipitation process which is associated with the emission of Si self-interstitials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 533
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Honda, K., Nakanishi, T., Ohsawa, A., Toyokura, N. in Microscopy of Semiconducting Materials 1987, edited by Cullis, A.G. and Augustus, P.D. (Inst. Phys. Conf. Ser. No.87, Bristol 1987) pp. 463–468.Google Scholar
[2] Honda, K., Nakanishi, T., Ohsawa, A., Toyokura, N., J. Appl. Phys. 62, 1960 (1987).CrossRefGoogle Scholar
[3] Wendt, H., Cerva, H., Lehmann, V., Pamler, W., J. Appl. Phys. accepted for publication.Google Scholar
[4] Eisenberg, P. and Brion, K., Electronics 42, 45 (1969).Google Scholar
[5] Seibt, M. and Graff, K. in Defects in Electronic Materials, edited by Stavola, M., Pearton, S.J., and Davies, G. (Mater. Res. Soc. Proc. 104, Pittsburgh, PA 1988) pp. 215–218.Google Scholar
[6] Seibt, M. and Graff, K., J. Appl. Phys. 63, 4444 (1988).CrossRefGoogle Scholar
[7] Das, G., J. Appl. Phys. 44, 4459 (1973).CrossRefGoogle Scholar
[8] Nes, E. and Lunde, G., J. Appl. Phys. 43, 1835 (1972).CrossRefGoogle Scholar
[9] Binary Alloy Phase diagrams, edited by Massalski, T.B., Murray, J.L., Bennett, L.H., and Baker, H. (American Society for Metals, Ohio 1986) Vol. 1, pp. 960–963.Google Scholar
[10] Solberg, J.K., Acta Cryst. A43, 684 (1978).CrossRefGoogle Scholar
[11] Bourret, A. and Schröter, W., Ultramicroscopy 14,97(1984).CrossRefGoogle Scholar