Skip to main content Accessibility help
×
Home

POST‐METALLIZATION ANNEALING OF ULTRA‐THIN REMOTE PLASMA ENHANCED CVD OXIDES

  • L‐Å Ragnarsson (a1), P. Lundgren (a1) and D. Landheer (a1) (a2)

Abstract

A remote plasma enhanced chemical vapour deposition (RPECVD) process was used to deposit thin silicon dioxides on silicon substrates. The oxide properties were compared with thermal oxides with similar thicknesses (2.5–9 nm) using capacitance‐voltage (C‐V), current‐voltage (I‐V) and constant voltage stress measurements (I‐t). Post‐metallization annealing (PMA) showed different annealing dynamics as compared to the thermal oxides for anneal times below approximately 1000 s (at 260 °C) after which the dynamics were similar. The deposited oxides had a higher initial interface state density (D it) than the thermal oxides, but after PMA they were found to be of the same quality as the thermal oxides. Positive charging of the deposited oxides during constant voltage stress was the same as for thermal oxides, showing that the stress endurance of the two are similar.

Copyright

References

Hide All
1 Lee, D. R., Hattangady, S. V., Niimi, H., Parker, C., Lucovsky, G., and Hauser, J. R., Microelectronic Engineering 28, 117120 (1995).
2 Parker, C. G., Silvestre, C. L., and Hauser, J. R., Microelectronic Engineering 28, 137140 (1995).
3 Lucovsky, G., Advanced Materials for Optics and Electronics 6, 5572 (1996).
4 Lucovsky, G., Niimi, H., Koh, K., Lee, D. R., and Jing, Z., in The Physics and chemistry of SiO2 and the Si‐SiO2 Interface ‐ 3, Los Angeles, 1996 (The Electrochemical Society proceedings series, Pennington, NJ), Vol. 96–1, p. 441–455.
5 Lundgren, P., Andersson, M. O., and Farmer, K. R., J. Appl. Phys. 74, 4780 (1993).
6 Andersson, M. O., Lundgren, P., Engström, O., and Farmer, K. R., Micorelectronic Engineering 22, 235238 (1993).
7 Andersson, M. O., Lundgren, A., and Lundgren, P., Phys. Rev. B 50, 11666 (1994).
8 Reed, M. L. and Plummer, J. D., J. Appl. Phys. 63, 57765793 (1988).
9 Ragnarsson, L.‐Å., Lundgren, P., Ovuka, Z., and Andersson, M. O., in The Physics and chemistry of SiO2 and the Si‐SiO2 Interface ‐ 3, Los Angeles, 1996 (The Electrochemical Society proceedings series, Pennington, NJ), Vol.96–1, p. 667676.
10 Lucovsky, G., Ma, Y., Yasuda, T., Silvestre, C., and Hauser, J. R., Jpn. J. of Appl. Phys. Part 1 31, 43874395 (1992).
11 Farmer, K. R., Andersson, M. O., and Engström, O., Appl. Phys. Lett. 60, 730732 (1992).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed