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Post-Deposition Sulfur Incorporation into CuInSe2 Thin Films

Published online by Cambridge University Press:  21 March 2011

Jochen Titus ,
Hans-Werner Schock ,
Robert W. Birkmire ,
William N. Shafarman  and
Udai P. Singh
Jochen Titus
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A.
Hans-Werner Schock
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, 70569 Stuttgart, Germany
Robert W. Birkmire
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A.
William N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A.
Udai P. Singh
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, U.S.A.
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Abstract

The effect of initial film composition and substrate in the sulfurization of CuInSe2 was investigated. CuInSe2 films deposited on either soda-lime glass (SL) or Corning 7059® borosilicate glass (7059) substrates were reacted in flowing H2S for times from 1 to 8 hours. Films with Cu-rich composition, Cu/In > 1, reacted for 1 hour had nearly all the Se replaced by S. For Cu-poor films the incorporation of S was significantly reduced. In addition, in Cu-poor films on SL glass CuInS2 and NaInS2 were found at the film surface. These phases were not detected in films on 7059 substrates or in Cu-rich films. A phenomenological model is proposed to explain the formation of segregated surface phases in Cu-poor films on SL substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H1.5
Copyright
Copyright © Materials Research Society 2001

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References

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