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Possible Diffusion of Molecular Hydrogen Along Microvoids in Device-Quality a-Si:H

Published online by Cambridge University Press:  26 February 2011

E. J. Vanderheiden ,
W. D. Ohlsen  and
P. C. Taylor
E. J. Vanderheiden
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
W. D. Ohlsen
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

A comparison of 1H nuclear magnetic resonance (NMR) measurements in freshly prepared a-Si:H films on substrates with those removed from the substrates shows that a large fraction of the trapped H2 molecules are released when the films are removed from the substrates. After the films on substrates have been aged for several months, an equal amount of H2 has diffused out of the film. This gradual aging appears-to stabilize after several months. Once aged, H2 can be diffused into the films by immersion in H2 gas. The diffusion time is around 2 weeks at 300 K which is much slower than in vitreous quartz or 7059 glass at the same temperature. Diffusion, which is enhanced during the aging process, could proceed via the remnant columnar structure in the film. This speculation is supported by the inability to detect, using pake-doublet experiments, significant changes in the H2 content and by the recent observation of oxygen diffusion along remnant columnar structure in device quality films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 159
Copyright
Copyright © Materials Research Society 1987

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