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Porous Silicon: A Possible Buffer Layer for Diamond Growth on Silicon Substrates

Published online by Cambridge University Press:  28 February 2011

Zhaohui Liu ,
B.Q. Zong  and
Zhangda Lin
Zhaohui Liu
Affiliation:
The State Key Lab. of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People’s Republic of China.
B.Q. Zong
Affiliation:
Department of Physics, Peking University, Beijing 100871, China.
Zhangda Lin
Affiliation:
The State Key Lab. of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, People’s Republic of China.
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Abstract

Continuous diamond films have been grown on porous silicon by hot filament chemical vapor deposition. The demonstration of diamond growth on porous silicon seems to suggest that porous silicon can act as a buffer layer for diamond growth on Si substrates, and that the nanoscale structures of porous silicon play an important role in nucleation and growth of diamond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 805
Copyright
Copyright © Materials Research Society 1995

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References

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