Hostname: page-component-77c89778f8-rkxrd Total loading time: 0 Render date: 2024-07-22T10:02:53.601Z Has data issue: false hasContentIssue false
  • English
  • Français

Poole Frenkel Effect on the DX Centers in III-V Ternary Alloys

Published online by Cambridge University Press:  25 February 2011

H. Altelarrea ,
J. Bosch ,
A. Perez ,
J. Samitier  and
J.R. Morante
H. Altelarrea
Affiliation:
Càtedra d’Electrònica. Fac.Física. Universitat de Barcelona. Diagonal 645-647. Barcelona 08028. Spain.
J. Bosch
Affiliation:
Càtedra d’Electrònica. Fac.Física. Universitat de Barcelona. Diagonal 645-647. Barcelona 08028. Spain.
A. Perez
Affiliation:
Càtedra d’Electrònica. Fac.Física. Universitat de Barcelona. Diagonal 645-647. Barcelona 08028. Spain.
J. Samitier
Affiliation:
Càtedra d’Electrònica. Fac.Física. Universitat de Barcelona. Diagonal 645-647. Barcelona 08028. Spain.
J.R. Morante
Affiliation:
Càtedra d’Electrònica. Fac.Física. Universitat de Barcelona. Diagonal 645-647. Barcelona 08028. Spain.
Get access

Abstract

The dependence of the DX centers thermal emission rates on the electric field has been measured by Isothermal Transient Spectroscopy (ITS) and differential ITS (DITS) techniques. These techniques allow us to achieve a more accurate analysis of these defects than the DLTS, which ability for the study of DX centers is discussed. This dependence has been found to be mainly due to a Poole-Frenkel effect and is the cause of the non-exponentiality of the thermal emission transients.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 785
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lang, D.V. and Henry, C.H., Phys. Rev. Lett. 35, 1525 (1975)Google Scholar
2 Omling, P., Samuelson, L. and Grimmeiss, H.G., J. Appl. Phys. 54, 5117 (1983).Google Scholar
3 Mooney, P.M., Theis, T.N. and Wright, S.L., Trans Tech Publ., Mat. Scien. For. 38–41, 1109 (1989).Google Scholar
4 Calleja, E., Gómez, A., Criado, J. and Muñoz, E., Trans Tech Publ., Mat. Scien. For. 38–41, 1115 (1989).Google Scholar
5 Morante, J.R., Samitier, J., Cornet, A. and Herms, A., Appl. Phys. Lett. 45, 1317 (1984).Google Scholar
6 Calleja, E., Mooney, P.M., Wright, S.L., Heiblum, M., Appl. Phys. Lett. 49, 657 (1986)Google Scholar
7 Morante, J.R., Roura, P., Perez, A., Samitier, J., Cornet, A. and Herms, A., Trans Tech Publ., Mat. Science. For. 10–12, 533 (1986)Google Scholar
8 Morante, J.R., Samitier, J., Herms, A., Cornet, A. and Cartujo, P., Solid St. Electron. 29, 759 (1986).Google Scholar
9 Frenkel, J., Phys. Rev 54, 647 (1938)Google Scholar
10 Pons, D., J.Appl. Phys. 55, 3644 (1984)Google Scholar
11 Makram-Ebeid, S. and Lannoo, M., Phys. Rev. B25, 6406 (1982)Google Scholar
12 Vincent, G., Chantre, A. and Bois, D., J. Appl. Phys. 50, 5484 (1979)Google Scholar