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Polysiliodn Annealing and its Inflience on Floating Gate Eeprom Degation

Published online by Cambridge University Press:  21 February 2011

Rakesh B. Seim  and
L. B. Andeion
Rakesh B. Seim
Affiliation:
National Semiconductor Corporation, Santa Clara, CA
L. B. Andeion
Affiliation:
National Semiconductor Corporation, Santa Clara, CA
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Abstract

Experimental results on the influence of prooessing on degradation of thin silicon dioxide films are reported. The high temperature polysilicon oxidation degrades the integrity and robustness of thermally grown dry oxide as shown by constant current charge to breakdown measuremeits.

Furthermore the influence of high temperature processing on the charge trapping properties of the tunnel oxide (silicon dioxide) are ascertained. The details of electron trapping its capture cross section, areal concentration and trapping efficiency as studied by high field dark current-voltage method is presented. Generally, the dominant −15 electron trap with a large capture cross section of 10 cm2 is observed and is believed to be due to phosphorus near polysilicon/thin oxide interface. In addition the QBD reduction is correlated to outdiffusion of water from the thin oxide as seen by reduction in the hysteretic instability of I-V curves.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 275
Copyright
Copyright © Materials Research Society 1990

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References

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