Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-20T05:09:40.496Z Has data issue: false hasContentIssue false
  • English
  • Français

Polycrystalline Silicon Single Electron Island by Excimer Laser Irradiation on a-Si Film

Published online by Cambridge University Press:  10 February 2011

C-M Park ,
J-H Jeon ,
M-S Lim ,
J-S Yoo  and
M-K Han
C-M Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
J-H Jeon
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
M-S Lim
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
J-S Yoo
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
M-K Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea, e-mail: mkh@eesrc-09.snu.ac.kr, phone: +82-2-880-7002, fax: +82-2-875-7372
Get access

Abstract

We propose a novel fabrication method for a room temperature operating single-electron memory using the size and location controlled poly-Si island by lithographic technique and excimer laser annealing.

We have patterned tip shaped excimer laser windows and irradiated laser energy through windows for crystallizing amorphous silicon. As a result of laser energy, the poly-Si grains are growing from patterned window side so that the fine grain and isolated large poly-Si quantum dot are inherently formed by well-known ACSLG regime. The oxidation was then performed by RTP at 950 °C for 30 seconds in order to isolate quantum island and fine poly-Si grains for quantum dot. The peaks of the poly-oxide along the poly-Si grain boundaries were lowered during that oxidation and isolated the poly-Si grains and made oxide barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 981
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Foxman, E.B., M'Euen, P.L., Meirav, U., Wingreen, N.S., Meir, Y., Belk, P.A., Belk, N.R., and Kastner, M.A., Phys. Rev. B, 47, p. 10020, 1993.Google Scholar
2 Yano, K., Ishii, T., Hashomoto, T., Kobayashi, T., Murai, F., and Seki, K., IEDM-93, p. 541, 1993.Google Scholar
3 Nakajima, A., Futatsugi, T., Kosemura, K., Fukano, T., and Yokoyama, N., IEDM- 96, p. 952, 1996.Google Scholar
4 Song, H. J., and Im, J. S., Appl. Phys. Lett., 68, no. 22, p. 3165, 1996.Google Scholar
5 Jun, M. C., Kim, Y. S., Han, M. K., Kim, J. W., and Kim, K. B., Appl. Phys. Lett., 66, No. 17, p. 2206, 1995.Google Scholar