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Polycrystalline β-SiC Film Growth on Si by ECR-CVD at 178 - 500°C

Published online by Cambridge University Press:  15 February 2011

Kuan-Lun Cheng ,
Chih-Chien Liu ,
Chung-Min Fu ,
Huang-Chung Cheng ,
Chiapyng Lee  and
Tri-Rung Yew
Kuan-Lun Cheng
Affiliation:
Dept. of Elec. Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC
Chih-Chien Liu
Affiliation:
Dept. of Chem. Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Chung-Min Fu
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
Huang-Chung Cheng
Affiliation:
Dept. of Elec. Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC
Chiapyng Lee
Affiliation:
Dept. of Chem. Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, ROC
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Abstract

Polycrystalline β-SiC, with grain size up to 0.2 μm, was grown on silicon substrate by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from SiH4/CH4/H2 at 178–500 °C. The nucleation process and surface structure of polycrystalline SiC were investigated via observing the film surface by atomic force microscopy (AFM). Reaction species which promote polycrystalline SiC was in-situ monitored by quadruple mass spectrum analysers during deposition process, which is crucial for the control of polycrystalline SiC growth. The microstructure of SiC films were inspected by bright-field imaging, dark-field imaging, and electron diffraction in cross-sectional transmission electron microscopy. This paper will also discuss the key parameters for the nucleation and growth of polycrystalline β-SiC at very low temperature in ECR-CVD system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 271
Copyright
Copyright © Materials Research Society 1996

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References

1. Urushidani, T., Kobayashi, S., Kimoto, T. and Matsunami, H., Extended Abstract of the 1993 International Conference on Solid State Device and Materials 814 (1993).Google Scholar
2. Trew, R. J., Yan, J. B. and Mock, P. M., Proc. of the IEEE 79, 598 (1991).Google Scholar
3. Palmour, J. W., Edmond, J. A., Kong, H. S. and Carter, C. H. Jr., Amorphous and Crystalline Silicon Carbide IV (Springer-Verlag, Berlin, 1992).Google Scholar
4. Liu, C. C., Lee, C., Cheng, K. L., Cheng, H. C. and Yew, T. R., Appl. Phys. Lett. 66, 168 (1995).Google Scholar
5. Cheng, K. L., Cheng, H. C., Liu, C. C., Lee, C. and Yew, T. R., Jpn. J. Appl. Phys. 10B, 134 (1995).Google Scholar
6. Yoshida, A., Setsune, K. and Hirao, T., IEEE EDL, 9, 90 (1988).Google Scholar
7. Ohshita, Y., J. Electrochem. Soc., 142, 1002 (1995).Google Scholar
8. Wang, K. C., PhD thesis, National Tsing-Hua University, 1995.Google Scholar
9. Chou, J. S., Sah, W. J. and Lee, S. C., Mat. Chem. and Phys. 32, 273 (1992).Google Scholar