Hostname: page-component-7c8c6479df-94d59 Total loading time: 0 Render date: 2024-03-19T03:04:02.026Z Has data issue: false hasContentIssue false

Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure

Published online by Cambridge University Press:  01 February 2011

Sachio Kitagawa
Affiliation:
re004006@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, 1-1-1, Noji-Higashi, Kusatsu-shi, Shiga, 525-8577, Japan, +81-77-561-2884
Kenichi kosaka
Affiliation:
ro003994@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, Japan
Tadayoshi Tuchiya
Affiliation:
tsuchiya@fed.or.jp, R&D Association for Future Electron Devices, Advanced HF Device R&D Center
Akira Suzuki
Affiliation:
a-suzuki@se.ritsumei.ac.jp, Ritsumeikan University, Res. Org. of Sci & Eng., Japan
Tsutomu Araki
Affiliation:
tara@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, Japan
Yasushi Nanishi
Affiliation:
nanishi@se.ritsumei.ac.jp, Ritsumeikan University, Photonics, Japan
Get access

Abstract

Optical properties of tensile strained AlxGa1-xN films of AlxGa1-xN/GaN heterostructures grown on sapphire were investigated by using polarization-resolved photoluminescence spectroscopy. Emissions from AlxGa1-xN with polarization of E//c and E⊥c were obtained at different peak energies. The energy separation of these emissions with polarization was increased linearly with the increase in Al mole fraction of the strained AlxGa1-xN, indicating that the energy separation was due to biaxial strain in the tensile strained AlxGa1-xN.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chichibu, S., Azuhata, T., Sota, T., Amano, H., and Akasaki, I., Appl. Phys. Lett. 70, 2085 (1997).CrossRefGoogle Scholar
[2] Chichibu, S., Shikanai, A., Azuhata, T., Sota, T., Kuramata, A., Horino, K., and Nakamura, S., Appl. Phys. Lett. 68, 3766 (1996).CrossRefGoogle Scholar
[3] Tchounkeu, M., Briot, O., Gil, B., Alex, J. P., and Aulombard, R. L., J. Appl. Phys. 80, 5352 (1996).CrossRefGoogle Scholar
[4] Zhao, D. G., Xu, S. J., Xie, M. H., Tong, S. Y., and Yang, H., Appl. Phys. Lett. 83, 677 (2003).CrossRefGoogle Scholar
[5] Cros, A., Angerer, H., Ambacher, O., Stutzmann, M., Höpler, R., and Metzger, T., Solid State Communications 104, 35 (1997).CrossRefGoogle Scholar
[6] Li, J., Oder, T. N., Nakarmi, M. L., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 80, 1210 (2001).CrossRefGoogle Scholar
[7] Akasaki, I. and Amano, H., Jpn. J. Appl. Phys. 36, 5359 (1997).CrossRefGoogle Scholar
[8] Yamada, Y., Ueki, Y., Nakamura, K., Taguchi, T., Kawaguchi, Y., Ishibashi, A., and Yokogawa, T., Appl. Phys. Lett. 84, 2082 (2004).CrossRefGoogle Scholar
[9] Nam, K. B., Li, J., Nakarmi, M. L., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 84, 5264 (2004).CrossRefGoogle Scholar