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Polarization Relaxation in Pzt/Plzt Thin Film Capacitors

Published online by Cambridge University Press:  10 February 2011

Bo Jiang ,
Venkatasubramani Balu ,
Tung-Sheng Chen ,
Shao-Hong Kuah  and
Jack C. Lee
Bo Jiang
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Venkatasubramani Balu
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Tung-Sheng Chen
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Shao-Hong Kuah
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
Jack C. Lee
Affiliation:
Microelectronics Research Center, The University of Texas, Austin, Texas 78712
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Abstract

Polarization relaxation in PZT and PLZT (with La concentration from 0% to 10%) thin film capacitors was characterized in the time range from 10 ns to 1000 s. It was found that at zero volt the polarization in PZT and PLZT thin films changes logarithmically with time, P(t) = blog(t) + P0, and the polarization current density J(t) = dP(t)/ dt obeys the Curie-von Schweidler Law, J(t) = b. t−x, with n = 1 from 100 ns extending to 10 s. Over 10 s, the exponent n in the J-t relationship becomes less than 1. The coefficient b in the Q-t and J-t relationship at zero volt correlates strongly with the remanent polarization. La doping in PZT reduces remanent polarization and reduces relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 267
Copyright
Copyright © Materials Research Society 1996

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