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Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization

Published online by Cambridge University Press:  15 March 2011

R. Vetury ,
I.P. Smorchkova ,
C.R. Elsass ,
B. Heying ,
S. Keller  and
U.K. Mishra
R. Vetury
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
I.P. Smorchkova
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
C.R. Elsass
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
B. Heying
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
S. Keller
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
U.K. Mishra
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
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Abstract

The contribution of spontaneous and piezoelectric polarization to the formation of a 2DEG in AlGaN/GaN heterostructures was investigated using undoped AlGaN/GaN structures. Hall measurements of 2DEG density on such structures with varying Al percentage (8%-27%) and varying thickness of the AlGaN layer (30-500Å) indicated that donor-like surface states at an energy of 1.42eV below the conduction band were the source of electrons in the 2DEG. Field effect transistors were fabricated on such undoped heterostructures. For an AlGaN/GaN structure with 0.27 Al mole fraction, power density in excess of 3.5 W/mm at 6 GHz with corresponding maximum PAE of 33.5% was obtained. These results exceed the best reported power performance of MBE grown GaN HFETs on sapphire, thus demonstrating the excellent capability of MBE grown GaN heterostructures for microwave power applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T2.5.1
Copyright
Copyright © Materials Research Society 2000

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References

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