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Polarization Anisotropy in Electroreflectance Spectrum of Porous Silicon

Published online by Cambridge University Press:  11 February 2011

Toshihiko Toyama ,
Yasuharu Nakai ,
Koji Moriguchi  and
Hiroaki Okamoto
Toshihiko Toyama
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560–8531, Japan
Yasuharu Nakai
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560–8531, Japan
Koji Moriguchi
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560–8531, Japan
Hiroaki Okamoto
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560–8531, Japan
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Abstract

Linearly polarized electroreflectance (ER) measurements have been firstly performed on PSi with near-normal incident (NNI) and glancing-angle incident (GAI) light. In the NNI geometry, no significant polarization anisotropy is observed. Meanwhile, in GAI geometry, a clear polarization anisotropy is observed. The s-polarized ER spectrum consists of the ER features corresponding to those found in the NNI geometry, while in the p-polarized ER spectrum, the two features found in s-polarized spectrum in infrared-visible region are not found, while a new feature is observed at ∼2.1 eV. The mechanism of the unusual polarization anisotropy is discussed in association with structural anisotropy of PSi.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.43
Copyright
Copyright © Materials Research Society 2003

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References

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