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Point Defects, Dislocations in GaAs and Material Homogeneity

  • J. C. Bourgoin (a1), H. J. von Bardeleben (a1), H. Lin (a2) and D. Stievenard (a3)

Abstract

Combined positron annihilation and differential thermal analysis have shown that, in bulk GaAs materials, dislocations are decorated with vacancy related defects which recombine with As interstitials originating from As clusters. The role of these dislocations, the role of As source of these clusters are described and the consequences on the material homogeneity discussed.

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